Pam Mei Er, Li Sifan, Su Tong, Chien Yu-Chieh, Li Yesheng, Ang Yee Sin, Ang Kah-Wee
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore.
Science, Mathematics and Technology (SMT), Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore, 487372, Singapore.
Adv Mater. 2022 Jul;34(30):e2202722. doi: 10.1002/adma.202202722. Epub 2022 Jun 17.
Coupling charge impurity scattering effects and charge-carrier modulation by doping can offer intriguing opportunities for atomic-level control of resistive switching (RS). Nonetheless, such effects have remained unexplored for memristive applications based on 2D materials. Here a facile approach is reported to transform an RS-inactive rhenium disulfide (ReS ) into an effective switching material through interfacial modulation induced by molybdenum-irradiation (Mo-i) doping. Using ReS as a model system, this study unveils a unique RS mechanism based on the formation/dissolution of metallic β-ReO filament across the defective ReS interface during the set/reset process. Through simple interfacial modulation, ReS of various thicknesses are switchable by modulating the Mo-irradiation period. Besides, the Mo-irradiated ReS (Mo-ReS ) memristor further exhibits a bipolar non-volatile switching ratio of nearly two orders of magnitude, programmable multilevel resistance states, and long-term synaptic plasticity. Additionally, the fabricated device can achieve a high MNIST learning accuracy of 91% under a non-identical pulse train. The study's findings demonstrate the potential for modulating RS in RS-inactive 2D materials via the unique doping-induced charged impurity scattering property.
将电荷杂质散射效应与通过掺杂实现的载流子调制相结合，可为电阻开关（RS）的原子级控制提供有趣的机会。尽管如此，对于基于二维材料的忆阻器应用，此类效应仍未得到探索。在此，报道了一种简便方法，通过钼辐照（Mo-i）掺杂诱导的界面调制，将无RS活性的二硫化铼（ReS₂）转变为有效的开关材料。以ReS₂作为模型系统，本研究揭示了一种独特的RS机制，该机制基于在设置/重置过程中跨越有缺陷的ReS₂界面形成/溶解金属β-ReO细丝。通过简单的界面调制，通过调节钼辐照时间，各种厚度的ReS₂均可实现开关功能。此外，钼辐照的ReS₂（Mo-ReS₂）忆阻器进一步展现出近两个数量级的双极非易失性开关比、可编程的多级电阻状态以及长期的突触可塑性。此外，所制备的器件在非相同脉冲序列下可实现91%的高MNIST学习准确率。该研究结果证明了通过独特的掺杂诱导电荷杂质散射特性来调制无RS活性的二维材料中RS的潜力。
