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本征磁性拓扑绝缘体[MnTe][BiTe]中的单层磁体相,远超热力学极限。

Single-Layer Magnet Phase in Intrinsic Magnetic Topological Insulators, [MnTe][BiTe], Far beyond the Thermodynamic Limit.

作者信息

Jain Deepti, Yi Hee Taek, Yao Xiong, Mazza Alessandro R, Chen An-Hsi, Kisslinger Kim, Han Myung-Geun, Brahlek Matthew, Oh Seongshik

机构信息

Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, United States.

Center for Quantum Materials Synthesis, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, United States.

出版信息

Nano Lett. 2025 Mar 26;25(12):4720-4726. doi: 10.1021/acs.nanolett.4c05860. Epub 2025 Mar 13.

DOI:10.1021/acs.nanolett.4c05860
PMID:40080655
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12333432/
Abstract

The intrinsic magnetic topological insulator (IMTI) family [MnTe][BiTe] has demonstrated magneto-topological properties dependent on , making it a promising platform for advanced electronics and spintronics. However, due to technical barriers in sample synthesis, their properties in the large limit remain unknown. To overcome this, we utilized the atomic layer-by-layer molecular beam epitaxy (ALL-MBE) technique and achieved IMTIs with as large as 15, far beyond that previously reported in bulk crystals or thin films. Then, we discover that the "single-layer magnet (SLM)" phase, primarily determined by intralayer ferromagnetic coupling, emerges for > ∼4 and remains little affected up to = 15. Nonetheless, still, nonzero, interlayer ferromagnetic coupling is necessary to stabilize the SLM phase, suggesting that the SLM phase eventually disappears in the → ∞ limit. This study uncovers the secrets of IMTIs beyond the thermodynamic limit and opens a door to diverse magneto-topological applications.

摘要

本征磁性拓扑绝缘体(IMTI)家族[MnTe][BiTe]已展现出依赖于 的磁拓扑性质,使其成为先进电子学和自旋电子学的一个有前景的平台。然而,由于样品合成中的技术障碍,它们在大 极限下的性质仍然未知。为克服这一问题,我们利用原子逐层分子束外延(ALL-MBE)技术,实现了高达15的 ,远超此前在体晶体或薄膜中报道的数值。然后,我们发现,主要由层内铁磁耦合决定的“单层磁体(SLM)”相,在 > ∼4时出现,并且在 = 15之前几乎不受影响。尽管如此,仍然需要非零的层间铁磁耦合来稳定SLM相,这表明SLM相最终在 → ∞极限下消失。本研究揭示了超越热力学极限的IMTI的秘密,并为各种磁拓扑应用打开了一扇门。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5150/12333432/4bc5d016fe08/nl4c05860_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5150/12333432/033c03851080/nl4c05860_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5150/12333432/bec3677eafe2/nl4c05860_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5150/12333432/ad480f179a5b/nl4c05860_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5150/12333432/7b3fb33e22c8/nl4c05860_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5150/12333432/4bc5d016fe08/nl4c05860_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5150/12333432/033c03851080/nl4c05860_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5150/12333432/bec3677eafe2/nl4c05860_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5150/12333432/ad480f179a5b/nl4c05860_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5150/12333432/7b3fb33e22c8/nl4c05860_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5150/12333432/4bc5d016fe08/nl4c05860_0005.jpg

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本文引用的文献

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Unveiling the Anomalous Hall Response of the Magnetic Structure Changes in the Epitaxial MnBiTe Films.揭示外延MnBiTe薄膜中磁结构变化的反常霍尔响应
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Enhanced Quantum Anomalous Hall Effect with an Active Capping Layer.有源覆盖层增强的量子反常霍尔效应。
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Layer-Dependent Magnetic Structure and Anomalous Hall Effect in the Magnetic Topological Insulator MnBiTe.
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Nano Lett. 2023 Mar 8;23(5):1652-1658. doi: 10.1021/acs.nanolett.2c03773. Epub 2023 Feb 15.
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Role of Magnetic Defects in Tuning Ground States of Magnetic Topological Insulators.磁缺陷在调控磁性拓扑绝缘体基态中的作用。
Adv Mater. 2023 May;35(21):e2209951. doi: 10.1002/adma.202209951. Epub 2023 Mar 16.
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Ferromagnetic-antiferromagnetic coexisting ground state and exchange bias effects in MnBiTe and MnBiTe.锰铋碲和锰铋碲中共存的铁磁-反铁磁基态和交换偏置效应
Nat Commun. 2022 Dec 10;13(1):7646. doi: 10.1038/s41467-022-35184-7.
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Delicate Ferromagnetism in MnBiTe.锰铋碲中的精细铁磁性
Nano Lett. 2022 Dec 28;22(24):9815-9822. doi: 10.1021/acs.nanolett.2c02500. Epub 2022 Oct 31.
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Epitaxial Growth and Structural Characterizations of MnBiTe Thin Films in Nanoscale.纳米尺度下MnBiTe薄膜的外延生长与结构表征
Nanomaterials (Basel). 2021 Dec 7;11(12):3322. doi: 10.3390/nano11123322.
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Mn-Rich MnSb Te : A Topological Insulator with Magnetic Gap Closing at High Curie Temperatures of 45-50 K.富锰的MnSbTe:一种在45 - 50K的高居里温度下磁隙闭合的拓扑绝缘体。
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Even-Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBiTe Thin Films.拓扑磁体MnBiTe薄膜中依赖于奇偶层的反常霍尔效应
Nano Lett. 2021 Sep 22;21(18):7691-7698. doi: 10.1021/acs.nanolett.1c02493. Epub 2021 Sep 1.
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Spacer-Layer-Tunable Magnetism and High-Field Topological Hall Effect in Topological Insulator Heterostructures.拓扑绝缘体异质结构中层间可调磁性和高场拓扑霍尔效应
Nano Lett. 2021 Jul 28;21(14):5914-5919. doi: 10.1021/acs.nanolett.1c00668. Epub 2021 Jul 15.