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薄膜铌酸锂上氮化硅微环中的二次谐波和和频产生

Second harmonic and sum frequency generation in silicon nitride microring on thin-film lithium niobate.

作者信息

Wang Jianguo, Wang Binbin, Qu Junling, Zhang Yanyan, Zhao Chenyang, Wang Jie, Fang Liang, Zhao Jianlin, Gan Xuetao

出版信息

Opt Lett. 2025 Mar 15;50(6):2057-2060. doi: 10.1364/OL.555906.

Abstract

We demonstrate significant second harmonic generation (SHG) and sum frequency generation (SFG) on a thin-film lithium niobate (TFLN) platform by loading a silicon nitride (SiN) microring resonator, which avoids the dry etching of lithium niobate. By optimizing SiN-loaded TFLN waveguide geometry, the phase-matching conditions between the fundamental pump laser and the SHG/SFG signals are designed. Combining with enhancement by the microring resonator, remarkable SHG and SFG signals with conversion efficiencies of 16.43%/W and 5.90%/W are realized, respectively. Compared to traditional TFLN photonic platform, this CMOS-compatible strategy offers an opportunity for achieving large-scale on-chip nonlinear photonic devices based on TFLN.

摘要

我们通过加载氮化硅(SiN)微环谐振器,在薄膜铌酸锂(TFLN)平台上展示了显著的二次谐波产生(SHG)和和频产生(SFG),这避免了铌酸锂的干法蚀刻。通过优化加载SiN的TFLN波导几何结构,设计了基频泵浦激光与SHG/SFG信号之间的相位匹配条件。结合微环谐振器的增强作用,分别实现了转换效率为16.43%/W和5.90%/W的显著SHG和SFG信号。与传统的TFLN光子平台相比,这种与CMOS兼容的策略为基于TFLN实现大规模片上非线性光子器件提供了机会。

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