Rao Ashutosh, Malinowski Marcin, Honardoost Amirmahdi, Talukder Javed Rouf, Rabiei Payam, Delfyett Peter, Fathpour Sasan
Opt Express. 2016 Dec 26;24(26):29941-29947. doi: 10.1364/OE.24.029941.
Second-order optical nonlinear effects (second-harmonic and sum-frequency generation) are demonstrated in the telecommunication band by periodic poling of thin films of lithium niobate wafer-bonded on silicon substrates and rib-loaded with silicon nitride channels to attain ridge waveguide with cross-sections of ~2 µm. A nonlinear conversion of 8% is obtained with a pulsed input in 4 mm long waveguides. The choice of silicon substrate makes the platform potentially compatible with silicon photonics, and therefore may pave the path towards on-chip nonlinear and quantum-optic applications.
通过对键合在硅衬底上并加载有氮化硅通道的铌酸锂薄膜进行周期性极化，在电信波段展示了二阶光学非线性效应（二次谐波产生和和频产生），以获得横截面约为2微米的脊形波导。在4毫米长的波导中，脉冲输入可实现8%的非线性转换。硅衬底的选择使该平台有可能与硅光子学兼容，因此可能为片上非线性和量子光学应用铺平道路。
