Yadav Vibhav, Euchner Holger, May Matthias M
Universität Tübingen, Institute of Physical and Theoretical Chemistry D-72076 Tübingen Germany
Universität Tübingen, Center for Light-Matter Interaction, Sensors and Analytics LISA+ D-72076 Tübingen Germany.
RSC Adv. 2025 Mar 18;15(11):8464-8470. doi: 10.1039/d5ra00855g. eCollection 2025 Mar 17.
III-V semiconductors such as indium phosphide and multinary alloys derived thereof have shown high performance in multi-junction photoelectrochemical devices for solar water splitting. However, electrochemical conditions, especially in aqueous electrolytes, often lead to changes in surface structure and stoichiometry. These changes then affect the electronic structure, for instance leading to the formation of charge-carrier recombination centers or points of attack for dissolution of the material. It is therefore important to understand the surface structures that may arise in electrochemical environments to identify routes for electronic and electrochemical surface passivation. In this work, we assess the impact of oxygen adsorption on surface reconstructions of InP(001) first principle calculations. We observe predominantly P-rich surfaces for a large range of indium and oxygen chemical potentials, showing P O -type polyphosphate motifs. On the other hand, the frequently assumed In-rich (2 × 4) mixed-dimer surface reconstruction is found to be unstable for a large range of oxygen chemical potentials.
磷化铟等III-V族半导体及其衍生的多元合金在用于太阳能水分解的多结光电化学器件中表现出高性能。然而,电化学条件,尤其是在水性电解质中,常常导致表面结构和化学计量的变化。这些变化进而影响电子结构,例如导致电荷载流子复合中心的形成或材料溶解的攻击点。因此,了解在电化学环境中可能出现的表面结构对于确定电子和电化学表面钝化的途径很重要。在这项工作中,我们通过第一性原理计算评估了氧吸附对InP(001)表面重构的影响。我们观察到,在大范围的铟和氧化学势下,主要是富磷表面,呈现出PO-型多磷酸盐 motif。另一方面,经常假定的富铟(2×4)混合二聚体表面重构在大范围的氧化学势下被发现是不稳定的。