Cai Menghao, Hao Qinghua, Chen Hongjing, Dai Hongwei, Xing Yuntong, Zhang Aoyu, Li Longde, Chenwen Zhanhong, Wang Xia, Han Jun-Bo
Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology, Wuhan 430074, P. R. China.
R&D Center of Waynelabs Instruments&Solutions, Hubei Zhongwei Optoelectronic Technology Co., Ltd., Wuhan 430074, P. R. China.
ACS Appl Mater Interfaces. 2025 Apr 2;17(13):20431-20437. doi: 10.1021/acsami.5c00200. Epub 2025 Mar 19.
The ability to manipulate magnetic states through low currents is crucial for next-generation spintronics. Two-dimensional (2D) magnetic van der Waals (vdW) materials have attracted widespread attention due to their huge spin-orbit torque (SOT) effects. However, the relatively low Curie temperature () of most known 2D ferromagnets limits their applications above room temperature. Therefore, the effective manipulation of the magnetic state at room temperature and the integration of multiple storage units remain a challenge. Here, we investigate the fundamental magnetism and nonlocal manipulation phenomena of the room-temperature vdW material FeGaTe (FGaT) using magneto-optical Kerr effect measurement technology, leading to the successful construction of low-power room-temperature nonvolatile magnetic switches and efficient room-temperature magneto-optical memory devices (MOMD). Notably, the power consumption of the room-temperature magnetization switch and the current density of the MOMD are as low as 5.12 × 10 W/m and 5 × 10 A/cm, respectively. These findings provide solutions for the control and integration of next-generation vdW high-performance spintronic devices.
通过低电流操纵磁态的能力对于下一代自旋电子学至关重要。二维（2D）磁性范德华（vdW）材料因其巨大的自旋轨道转矩（SOT）效应而受到广泛关注。然而，大多数已知二维铁磁体相对较低的居里温度（）限制了它们在室温以上的应用。因此，在室温下有效操纵磁态以及集成多个存储单元仍然是一个挑战。在这里，我们使用磁光克尔效应测量技术研究了室温vdW材料FeGaTe（FGaT）的基本磁性和非局部操纵现象，成功构建了低功耗室温非易失性磁开关和高效室温磁光存储器件（MOMD）。值得注意的是，室温磁化开关的功耗和MOMD的电流密度分别低至5.12×10 W/m和5×10 A/cm。这些发现为下一代vdW高性能自旋电子器件的控制和集成提供了解决方案。
