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用于神经形态计算的室温范德华磁体的无场电流诱导磁化切换

Field-Free Current-Induced Magnetization Switching of a Room-Temperature van der Waals Magnet for Neuromorphic Computing.

作者信息

Zhou Chenxi, Guo Zhe, Li Qifeng, Zhang Gaojie, Wu Hao, Chen Jinsen, Li Rongxin, Zhang Shuai, Cao Cuimei, Xiong Rui, Chang Haixin, You Long

机构信息

School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China.

Key Laboratory of Intelligent Sensing System and Security, Ministry of Education, School of Microelectronics, Hubei University, Wuhan 430062, China.

出版信息

Nano Lett. 2025 May 7;25(18):7276-7282. doi: 10.1021/acs.nanolett.4c06518. Epub 2025 Apr 14.

DOI:10.1021/acs.nanolett.4c06518
PMID:40223797
Abstract

Spin orbit torque (SOT) has become a promising approach to manipulating magnetization switching. The high-quality interface is essentially desired for SOT performance, which is readily acquired by two-dimensional (2D) van der Waals (vdW) materials. Recently, a 2D ferromagnetic material, FeGaTe, has been discovered to possess an above-room-temperature Curie temperature and strong perpendicular magnetic anisotropy, providing an excellent candidate to build spintronic devices. On the other hand, an external magnetic field is necessary for the SOT-driven deterministic switching, hindering the real applications. Here, we realize field-free SOT switching of FeGaTe at room temperature. Moreover, inspired by the superiority of 2D materials in 3D heterogeneous integration, we explore the potential in the computing in memory. The artificial synapse function is studied and used in the convolutional neural network, achieving a high-accuracy (∼92.8%) pattern recognition. Our work paves the way for magnetic memory and neuromorphic computing.

摘要

自旋轨道矩(SOT)已成为一种有前景的操纵磁化翻转的方法。高质量的界面对于SOT性能至关重要,二维(2D)范德华(vdW)材料很容易获得这种界面。最近,人们发现一种二维铁磁材料FeGaTe具有高于室温的居里温度和很强的垂直磁各向异性,这为构建自旋电子器件提供了一个优秀的候选材料。另一方面,对于SOT驱动的确定性翻转而言,外部磁场是必需的,这阻碍了其实际应用。在此,我们在室温下实现了FeGaTe的无磁场SOT翻转。此外,受二维材料在三维异质集成方面优势的启发,我们探索了其在存内计算中的潜力。对人工突触功能进行了研究,并将其应用于卷积神经网络,实现了高精度(约92.8%)的模式识别。我们的工作为磁存储器和神经形态计算铺平了道路。

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