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基于MoSe/PdSe范德华异质结构的非制冷近红外至长波红外偏振敏感光电探测器。

Uncooled near- to long-wave-infrared polarization-sensitive photodetectors based on MoSe/PdSe van der Waals heterostructures.

作者信息

Liu Mingxiu, Qi Liujian, Zou Yuting, Zhang Nan, Zhang Feng, Xiang Huaiyu, Liu Zhilin, Qin Mingyan, Sun Xiaojuan, Zheng Yuquan, Lin Chao, Li Dabing, Li Shaojuan

机构信息

State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 130033, Changchun, Jilin, P.R. China.

University of Chinese Academy of Sciences (UCAS), 100049, Beijing, P.R. China.

出版信息

Nat Commun. 2025 Mar 20;16(1):2774. doi: 10.1038/s41467-025-58155-0.

Abstract

Infrared polarization-sensitive photodetectors have attracted considerable interest for night vision, remote sensing and imaging applications. Traditional bulk infrared photodetectors suffer from integration challenges and high-power consumption induced by the cryogenic cooling requirement. Here, we demonstrate a tunneling-dominant triple-junction broadband polarization-sensitive photodetector based on a van der Waals heterostructure, operating from the near-infrared (NIR) to the long-wave infrared (LWIR) band. The device exhibits low noise current, low power consumption and high detectivity. Benefiting from the photogating-assisted tunneling, it reaches a responsivity of ~ 8 × 10A/W and a response speed of 590 ns under NIR illumination. Apparent blackbody response and high photoresponse up to 10.6 μm is achieved with a room temperature responsivity and detectivity of 0.47 A/W and over 10 Jones. Remarkably, bias-tunable polarization detection capability and high polarization ratios are observed from NIR to LWIR, which further boost target detection and imaging capabilities. Our results offer a promising approach for multidimensional imaging applications and device miniaturization.

摘要

红外偏振敏感光电探测器在夜视、遥感和成像应用中引起了广泛关注。传统的体红外光电探测器面临集成挑战以及因低温冷却需求而导致的高功耗问题。在此,我们展示了一种基于范德华异质结构的隧穿主导型三结宽带偏振敏感光电探测器,其工作波段从近红外(NIR)到长波红外(LWIR)。该器件具有低噪声电流、低功耗和高探测率。受益于光闸辅助隧穿,在近红外光照下,其响应度达到约8×10 A/W,响应速度为590 ns。在室温下实现了表观黑体响应以及高达10.6μm的高光响应,响应度为0.47 A/W,探测率超过10 Jones。值得注意的是,从近红外到长波红外观察到了偏置可调偏振探测能力和高偏振比,这进一步提升了目标探测和成像能力。我们的结果为多维成像应用和器件小型化提供了一种有前景的方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c5/11926206/9a27fcf471b7/41467_2025_58155_Fig1_HTML.jpg

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