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基于外延HgCdTe上范德华异质结构的快速非制冷中波长红外探测器

Fast Uncooled Mid-Wavelength Infrared Photodetectors with Heterostructures of van der Waals on Epitaxial HgCdTe.

作者信息

Wang Yang, Gu Yue, Cui Ailiang, Li Qing, He Ting, Zhang Kun, Wang Zhen, Li Ziping, Zhang Zhenhan, Wu Peisong, Xie Runzhang, Wang Fang, Wang Peng, Shan Chongxin, Li Hua, Ye Zhenhua, Zhou Peng, Hu Weida

机构信息

State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.

State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.

出版信息

Adv Mater. 2022 Feb;34(6):e2107772. doi: 10.1002/adma.202107772. Epub 2021 Dec 22.

Abstract

Uncooled infrared photodetectors have evoked widespread interest in basic research and military manufacturing because of their low-cost, compact detection systems. However, existing uncooled infrared photodetectors utilize the photothermoelectric effect of infrared radiation operating at 8-12 µm, with a slow response time in the millisecond range. Hence, the exploration of new uncooled mid-wavelength infrared (MWIR) heterostructures is conducive to the development of ultrafast and high-performance nano-optoelectronics. This study explores a van der Waals heterojunction on epitaxial HgCdTe (vdWs-on-MCT) as an uncooled MWIR photodetector, which achieves fast response as well as high detectivity for spectral blackbody detection. Specifically, the vdWs-on-MCT photodetector has a fast response time of 13 ns (77 MHz), which is approximately an order of magnitude faster than commercial uncooled MCT photovoltaic photodetectors. Importantly, the device exhibits a photoresponsivity of 2.5 A W , quantum efficiency as high as 85%, peak detectivity of 2 × 10  cm Hz W under blackbody radiation at room temperature, and peak detectivity of up to 10  cm Hz W at 77 K. Thereby, this work facilitates the effective design of high-speed and high-performance heterojunction uncooled MWIR photodetectors.

摘要

非制冷红外探测器因其低成本、紧凑的探测系统而在基础研究和军事制造领域引起了广泛关注。然而,现有的非制冷红外探测器利用红外辐射的光热电效应,工作在8-12微米波段,响应时间较慢,在毫秒范围内。因此,探索新型非制冷中波长红外(MWIR)异质结构有利于超快和高性能纳米光电子学的发展。本研究探索了一种基于外延HgCdTe的范德华异质结(vdWs-on-MCT)作为非制冷MWIR探测器,该探测器在光谱黑体探测中实现了快速响应和高探测率。具体而言,vdWs-on-MCT探测器的快速响应时间为13纳秒(77兆赫兹),比商用非制冷MCT光伏探测器快约一个数量级。重要的是,该器件在室温黑体辐射下的光响应度为2.5 A/W,量子效率高达85%,峰值探测率为2×10¹¹ cm Hz¹/² W¹,在77 K时峰值探测率高达10¹² cm Hz¹/² W¹。因此,这项工作有助于高效设计高速和高性能异质结非制冷MWIR探测器。

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