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由无序范德华莫特绝缘体1T-TaSSe衍生出的手性赝能隙金属。

Chiral Pseudogap Metal Emerging from a Disordered Van der Waals Mott Insulator 1T-TaSSe.

作者信息

Jung Hyunjin, Jung Jiwon, Won ChoongJae, Park Hae-Ryong, Cheong Sang-Wook, Kim Jaeyoung, Cho Gil Young, Yeom Han Woong

机构信息

Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea.

Department of Physics, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea.

出版信息

Adv Mater. 2025 May;37(18):e2500287. doi: 10.1002/adma.202500287. Epub 2025 Mar 23.

Abstract

The emergence of a pseudogap is a hallmark of anomalous electronic states formed through substantial manybody interaction but the mechanism of the pseudogap formation and its role in related emerging quantum states such as unconventional superconductivity remain largely elusive. Here, the emergence of an unusual pseudogap in a representative van der Waals chiral charge density wave (CDW) materials with strong electron correlation, 1T-TaS is reported, through isoelectronic substitute of S. The evolution of electronic band dispersions of 1T-TaSSe (0 ⩽ x ⩽ 2) is systematically investigated using angle-resolved photoemission spectroscopy (ARPES). The results show that the Se substitution induces a quantum transition from an insulating to a pseudogap metallic phase with the CDW order preserved. Moreover, the asymmetry of the pseudogap spectral function is found, which reflects the chiral nature of CDW structure. The present observation is contrasted with the previous suggestions of a Mott transition driven by band width control or charge transfer. Instead, the pseudogap phase is attributed to a disordered Mott insulator in line with the recent observation of substantial lateral electronic disorder. These findings provide a unique electronic system with chiral pseudogap, where the complex interplay between CDW, chirality, disorder, and electronic correlation may lead to unconventional emergent physics.

摘要

赝能隙的出现是通过大量多体相互作用形成的反常电子态的一个标志,但赝能隙形成的机制及其在相关新兴量子态(如非常规超导)中的作用在很大程度上仍然难以捉摸。在此,通过S的等电子替代,报道了在具有强电子关联的代表性范德华手性电荷密度波(CDW)材料1T-TaS中出现的一种不寻常的赝能隙。利用角分辨光电子能谱(ARPES)系统地研究了1T-TaSSe(0⩽x⩽2)的电子能带色散的演变。结果表明,Se替代诱导了从绝缘相到赝能隙金属相的量子转变,同时保持了CDW序。此外,还发现了赝能隙谱函数的不对称性,这反映了CDW结构的手性本质。将目前的观察结果与先前关于由带宽控制或电荷转移驱动的莫特转变的观点进行了对比。相反,赝能隙相归因于无序莫特绝缘体,这与最近观察到的大量横向电子无序现象一致。这些发现提供了一个具有手性赝能隙的独特电子系统,其中CDW、手性、无序和电子关联之间的复杂相互作用可能导致非常规的新兴物理现象。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f641/12051792/1a62dc6cd37d/ADMA-37-2500287-g004.jpg

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