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二维1T-TaSe中维度驱动的金属到莫特绝缘体转变

Dimensionality-driven metal to Mott insulator transition in two-dimensional 1T-TaSe.

作者信息

Tian Ning, Huang Zhe, Jang Bo Gyu, Guo Shuaifei, Yan Ya-Jun, Gao Jingjing, Yu Yijun, Hwang Jinwoong, Tang Cenyao, Wang Meixiao, Luo Xuan, Sun Yu Ping, Liu Zhongkai, Feng Dong-Lai, Chen Xianhui, Mo Sung-Kwan, Kim Minjae, Son Young-Woo, Shen Dawei, Ruan Wei, Zhang Yuanbo

机构信息

State Key Laboratory of Surface Physics, New Cornerstone Science Laboratory, and Department of Physics, Fudan University, Shanghai 200438, China.

Shanghai Qi Zhi Institute, Shanghai 200232, China.

出版信息

Natl Sci Rev. 2023 May 16;11(3):nwad144. doi: 10.1093/nsr/nwad144. eCollection 2024 Mar.

Abstract

Two-dimensional materials represent a major frontier for research into exotic many-body quantum phenomena. In the extreme two-dimensional limit, electron-electron interaction often dominates over other electronic energy scales, leading to strongly correlated effects such as quantum spin liquid and unconventional superconductivity. The dominance is conventionally attributed to the lack of electron screening in the third dimension. Here, we discover an intriguing metal to Mott insulator transition in 1T-TaSe that defies conventional wisdom. Specifically, we find that dimensionality crossover, instead of reduced screening, drives the transition in atomically thin 1T-TaSe. A dispersive band crossing the Fermi level is found to be responsible for the bulk metallicity in the material. Reducing the dimensionality, however, effectively quenches the kinetic energy of these initially itinerant electrons, and drives the material into a Mott insulating state. The dimensionality-driven metal to Mott insulator transition resolves the long-standing dichotomy between metallic bulk and insulating surface of 1T-TaSe. Our work further reveals a new pathway for modulating two-dimensional materials that enables exploring strongly correlated systems across uncharted parameter space.

摘要

二维材料是奇异多体量子现象研究的一个主要前沿领域。在极端二维极限下,电子-电子相互作用通常比其他电子能量尺度更为显著,从而导致诸如量子自旋液体和非常规超导等强关联效应。传统上,这种主导地位归因于第三维中电子屏蔽的缺失。在此,我们在1T-TaSe中发现了一种违背传统认知的有趣的金属到莫特绝缘体转变。具体而言,我们发现维度交叉而非屏蔽减弱驱动了原子级薄的1T-TaSe中的转变。一条穿过费米能级的色散带被发现是该材料体相金属性的原因。然而,降低维度会有效地淬灭这些最初巡游电子的动能,并将材料驱动到莫特绝缘态。维度驱动的金属到莫特绝缘体转变解决了1T-TaSe体相金属性和绝缘表面之间长期存在的二分法。我们的工作进一步揭示了一种调节二维材料的新途径,这使得能够在未知参数空间中探索强关联体系。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9523/11640825/ac273c21ad64/nwad144fig1.jpg

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