Barraj Imen, Neifar Amel, Mestiri Hassen, Masmoudi Mohamed
Department of Computer Engineering, College of Computer Engineering and Sciences, Prince Sattam Bin Abdulaziz University, Al-Kharj 11942, Saudi Arabia.
Systems Integration & Emerging Energies (SI2E), Electrical Engineering Department, National Engineering School of Sfax, University of Sfax, Sfax 3038, Tunisia.
Micromachines (Basel). 2025 Feb 26;16(3):269. doi: 10.3390/mi16030269.
This paper presents a novel passive floating memristor emulator that operates without an external DC bias, leveraging the DTMOS technique. The design comprises only four MOSFETs and eliminates the need for external capacitors. The emulator achieves a high operating frequency of around 250 MHz and consumes zero static power. A comprehensive analysis and simulation, conducted using 180 nm CMOS technology, validates the circuit's performance. The versatility and effectiveness of the proposed emulator are demonstrated through its application in various circuits, including logic gates, a ring oscillator, and analog filters, highlighting its potential for diverse low-power, high-frequency applications. The proposed emulator provides a compact, efficient, and integrable solution for nanoelectronic circuit designs.
本文提出了一种新型无源浮动忆阻器仿真器,该仿真器利用DTMOS技术在无需外部直流偏置的情况下运行。该设计仅包含四个MOSFET,无需外部电容器。该仿真器实现了约250 MHz的高工作频率,且静态功耗为零。使用180 nm CMOS技术进行的全面分析和仿真验证了该电路的性能。通过将所提出的仿真器应用于各种电路,包括逻辑门、环形振荡器和模拟滤波器,证明了其通用性和有效性,突出了其在各种低功耗、高频应用中的潜力。所提出的仿真器为纳米电子电路设计提供了一种紧凑、高效且可集成的解决方案。