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具有固有应变的褶皱单层WSe中的异常声子软化

Anomalous Phonon Softening with Inherent Strain in Wrinkled Monolayer WSe.

作者信息

Kim Dong Hyeon, Yoo Jaekak, Suh Hyeong Chan, Won Yo Seob, Kim Sung Hyuk, Yi Dong-Joon, Jeong Byeong Geun, Lee Chanwoo, Lee Dongki, Kim Ki Kang, Lee Seung Mi, Koh Eui Kwan, Jeong Mun Seok

机构信息

Department of Physics, Hanyang University (HYU), Seoul, 04763, Republic of Korea.

Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.

出版信息

Adv Mater. 2025 Sep;37(35):e2419414. doi: 10.1002/adma.202419414. Epub 2025 Apr 10.

DOI:10.1002/adma.202419414
PMID:40207638
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12412005/
Abstract

Local deformation is a control knob to dynamically tune the electronic band structure of 2D semiconductors. This study demonstrates the local strain-dependent phonon properties of monolayer tungsten diselenide, which are investigated by using the scanning tunneling microscopy-based tip-enhanced Raman spectroscopy. The anomalous appearance and softening of the Raman-inactive out-of-plane mode are first revealed, which exhibits equivalent behavior to other principal phonons of tungsten diselenide. Local strain calculations unveiled the linear proportionalities of phonon nature on strain and it facilitates the derivation of Grüneisen parameter by experimental and theoretical approaches. Additionally, the origins of the anomalous appearance of the Raman-inactive mode are clearly proved in both classical physics and quantum mechanics. Especially quantum mechanical calculations have precisely described strain-induced selection rule relaxation by polarizability changes. The first discovery provides a fundamental understanding of the strain-dependent phonon properties, as well as suggesting a new distinct strain indicator, mode, for strain engineering.

摘要

局部变形是动态调节二维半导体电子能带结构的控制旋钮。本研究展示了单层二硒化钨的局部应变相关声子特性,通过基于扫描隧道显微镜的针尖增强拉曼光谱对其进行了研究。首次揭示了拉曼非活性面外模式的异常出现和软化现象,该模式表现出与二硒化钨其他主要声子等效的行为。局部应变计算揭示了声子性质与应变的线性比例关系,并有助于通过实验和理论方法推导格林艾森参数。此外,在经典物理学和量子力学中都明确证明了拉曼非活性模式异常出现的根源。特别是量子力学计算精确描述了由极化率变化引起的应变诱导选择规则弛豫。这一首次发现为应变相关声子特性提供了基本理解,同时也为应变工程提出了一种全新的独特应变指标——该模式。

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本文引用的文献

1
Dynamic Tuning of Single-Photon Emission in Monolayer WSe via Localized Strain Engineering.通过局部应变工程对单层 WSe 中单个光子发射进行动态调谐
Nano Lett. 2025 Mar 5;25(9):3438-3444. doi: 10.1021/acs.nanolett.4c05450. Epub 2025 Feb 18.
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Biaxial Strain Transfer in Monolayer MoS and WSe Transistor Structures.单层二硫化钼(MoS)和二硒化钨(WSe)晶体管结构中的双轴应变转移
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Atomic sawtooth-like metal films for vdW-layered single-crystal growth.
用于范德华层状单晶生长的原子锯齿状金属薄膜。
Nat Commun. 2024 Jul 11;15(1):5848. doi: 10.1038/s41467-024-50184-5.
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Role of Chalcogenides in Sensitive Therapeutic Drug Monitoring Using Laser Desorption and Ionization.应用激光解吸电离技术的硫属元素在敏感治疗药物监测中的作用。
ACS Nano. 2024 Jul 9;18(27):17681-17693. doi: 10.1021/acsnano.4c02429. Epub 2024 Jun 26.
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Engineering the Impact of Phonon Dephasing on the Coherence of a WSe_{2} Single-Photon Source via Cavity Quantum Electrodynamics.通过腔量子电动力学调控声子退相作用对WSe₂单光子源相干性的影响
Phys Rev Lett. 2024 May 17;132(20):206903. doi: 10.1103/PhysRevLett.132.206903.
6
Spin angular momentum-encoded single-photon emitters in a chiral nanoparticle-coupled WSe monolayer.手性纳米颗粒耦合的 WSe 单层中的自旋角动量编码单光子发射器。
Sci Adv. 2024 May 24;10(21):eadn7210. doi: 10.1126/sciadv.adn7210.
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Divergent Vibrational Property Induced by an Anomalous Layer Sequence in Two-Dimensional GaPS.二维GaPS中异常层序列诱导的不同振动特性。
J Phys Chem Lett. 2024 May 16;15(19):5183-5190. doi: 10.1021/acs.jpclett.4c00321. Epub 2024 May 8.
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Resonant Raman Scattering Study of Strain and Defects in Chemical Vapor Deposition Grown MoS Monolayers.化学气相沉积生长的MoS单层中应变和缺陷的共振拉曼散射研究
Small. 2025 Jul;21(28):e2310685. doi: 10.1002/smll.202310685. Epub 2024 Apr 1.
9
Programmable nanowrinkle-induced room-temperature exciton localization in monolayer WSe.可编程纳米皱纹诱导的单层二硒化钨室温激子局域化
Nat Commun. 2024 Feb 20;15(1):1543. doi: 10.1038/s41467-024-45936-2.
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Nano Lett. 2024 Jan 10;24(1):279-286. doi: 10.1021/acs.nanolett.3c03920. Epub 2023 Dec 20.