Kim Dong Hyeon, Yoo Jaekak, Suh Hyeong Chan, Won Yo Seob, Kim Sung Hyuk, Yi Dong-Joon, Jeong Byeong Geun, Lee Chanwoo, Lee Dongki, Kim Ki Kang, Lee Seung Mi, Koh Eui Kwan, Jeong Mun Seok
Department of Physics, Hanyang University (HYU), Seoul, 04763, Republic of Korea.
Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.
Adv Mater. 2025 Sep;37(35):e2419414. doi: 10.1002/adma.202419414. Epub 2025 Apr 10.
Local deformation is a control knob to dynamically tune the electronic band structure of 2D semiconductors. This study demonstrates the local strain-dependent phonon properties of monolayer tungsten diselenide, which are investigated by using the scanning tunneling microscopy-based tip-enhanced Raman spectroscopy. The anomalous appearance and softening of the Raman-inactive out-of-plane mode are first revealed, which exhibits equivalent behavior to other principal phonons of tungsten diselenide. Local strain calculations unveiled the linear proportionalities of phonon nature on strain and it facilitates the derivation of Grüneisen parameter by experimental and theoretical approaches. Additionally, the origins of the anomalous appearance of the Raman-inactive mode are clearly proved in both classical physics and quantum mechanics. Especially quantum mechanical calculations have precisely described strain-induced selection rule relaxation by polarizability changes. The first discovery provides a fundamental understanding of the strain-dependent phonon properties, as well as suggesting a new distinct strain indicator, mode, for strain engineering.
局部变形是动态调节二维半导体电子能带结构的控制旋钮。本研究展示了单层二硒化钨的局部应变相关声子特性,通过基于扫描隧道显微镜的针尖增强拉曼光谱对其进行了研究。首次揭示了拉曼非活性面外模式的异常出现和软化现象,该模式表现出与二硒化钨其他主要声子等效的行为。局部应变计算揭示了声子性质与应变的线性比例关系,并有助于通过实验和理论方法推导格林艾森参数。此外,在经典物理学和量子力学中都明确证明了拉曼非活性模式异常出现的根源。特别是量子力学计算精确描述了由极化率变化引起的应变诱导选择规则弛豫。这一首次发现为应变相关声子特性提供了基本理解,同时也为应变工程提出了一种全新的独特应变指标——该模式。