Tan Chao, Yuan Shibin, Yu Linshan, Chen Yaohui, He Changjiang
College of Electrical and New Energy, China Three Gorges University, Yichang 443002, China.
Sensors (Basel). 2025 Apr 1;25(7):2224. doi: 10.3390/s25072224.
To solve the problem of long turn-off times for transient electromagnetic (TEM) transmitters with inductive loads, a new second-order fast discharge circuit topology added into the original H-bridge structure for TEM transmitters is presented, which includes a capacitor, two Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), and two resistors. Firstly, the four operating stages and principles of the second-order circuit were analyzed. Then, the mathematical models of the turn-off time of the current and the voltage stress of the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) were established using the analytical method. Finally, the parameters of the resistor and capacitor were selected by finding the optimal solution for the fixed transmitter coil. Compared with the simulation results of the other two topologies, the proposed topology demonstrates a current-independent turn-off time and achieves the shortest duration at 50 A, while maintaining lower voltage stress at 9 A. The experimental results of the prototype show that the turn-off time is always about 64 μs when the currents are 1 A, 5 A, and 9 A. Simulation and experimental results show that the second-order circuit reduces the MOSFET's turn-off time to 58 μs via Resistor-Inductor-Capacitor (RLC) series resonance, with the turn-off duration remaining load-current-independent.
为解决具有感性负载的瞬变电磁(TEM)发射机关断时间长的问题,提出了一种新的二阶快速放电电路拓扑结构,该结构被添加到TEM发射机原有的H桥结构中,它包括一个电容器、两个金属氧化物半导体场效应晶体管(MOSFET)和两个电阻器。首先,分析了二阶电路的四个工作阶段及原理。然后,采用解析法建立了电流关断时间和金属氧化物半导体场效应晶体管(MOSFET)电压应力的数学模型。最后,通过为固定的发射机线圈寻找最优解来选择电阻器和电容器的参数。与其他两种拓扑结构的仿真结果相比,所提出的拓扑结构具有与电流无关的关断时间,在50 A时实现了最短的持续时间,同时在9 A时保持较低的电压应力。原型的实验结果表明,当电流为1 A、5 A和9 A时,关断时间始终约为64 μs。仿真和实验结果表明,二阶电路通过电阻-电感-电容(RLC)串联谐振将MOSFET的关断时间缩短至58 μs,关断持续时间与负载电流无关。