International Center for Young Scientists, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
Sci Rep. 2016 Oct 6;6:34757. doi: 10.1038/srep34757.
The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output current. The device's electrical properties are compared with those of planar-type MOSFETs, which are fabricated simultaneously on the same substrate. The triple-gate MOSFET's output current (174.2 mA mm) is much higher than that of the planar-type device (45.2 mA mm), and the on/off ratio and subthreshold swing are more than 10 and as low as 110 mV dec, respectively. The fabrication of these H-diamond triple-gate MOSFETs will drive diamond electronic device development forward towards practical applications.
大面积单晶金刚石晶圆的缺乏导致我们不得不缩小金刚石电子器件的尺寸。在这里，我们设计并制造了氢化金刚石 (H-diamond) 三栅极金属氧化物半导体场效应晶体管 (MOSFET)，以扩展器件的缩小尺寸并增加器件的输出电流。将器件的电特性与同时在同一衬底上制造的平面型 MOSFET 的电特性进行了比较。三栅极 MOSFET 的输出电流 (174.2 mA mm) 比平面型器件 (45.2 mA mm) 高得多，而导通/截止比和亚阈值摆幅分别超过 10 和低至 110 mV dec。这些 H-diamond 三栅极 MOSFET 的制造将推动金刚石电子器件朝着实际应用的方向发展。
