• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

用于深度神经网络的高开/关比自旋电子多电平存储单元

High On/Off Ratio Spintronic Multi-Level Memory Unit for Deep Neural Network.

作者信息

Zhang Kun, Jia Xiaotao, Cao Kaihua, Wang Jinkai, Zhang Yue, Lin Kelian, Chen Lei, Feng Xueqiang, Zheng Zhenyi, Zhang Zhizhong, Zhang Youguang, Zhao Weisheng

机构信息

Fert Beijing Research Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, P. R. China.

Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao, 266101, P. R. China.

出版信息

Adv Sci (Weinh). 2022 May;9(13):e2103357. doi: 10.1002/advs.202103357. Epub 2022 Feb 20.

DOI:10.1002/advs.202103357
PMID:35229495
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9069383/
Abstract

Spintronic devices are considered as one of the most promising technologies for non-volatile memory and computing. However, two crucial drawbacks, that is, lack of intrinsic multi-level operation and low on/off ratio, greatly hinder their further application for advanced computing concepts, such as deep neural network (DNN) accelerator. In this paper, a spintronic multi-level memory unit with high on/off ratio is proposed by integrating several series-connected magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy (PMA) and a Schottky diode in parallel. Due to the rectification effect on the PMA MTJ, an on/off ratio over 100, two orders of magnitude higher than intrinsic values, is obtained under proper proportion of alternating current and direct current. Multiple resistance states are stably achieved and can be reconfigured by spin transfer torque effect. A computing-in-memory architecture based DNN accelerator for image classification with the experimental parameters of this proposal to evidence its application potential is also evaluated. This work can satisfy the rigorous requirements of DNN for memory unit and promote the development of high-accuracy and robust artificial intelligence applications.

摘要

自旋电子器件被认为是用于非易失性存储器和计算的最有前途的技术之一。然而,两个关键缺点,即缺乏固有的多级操作和低开/关比,极大地阻碍了它们在诸如深度神经网络(DNN)加速器等先进计算概念中的进一步应用。在本文中,通过将几个具有垂直磁各向异性(PMA)的串联连接磁隧道结(MTJ)与一个肖特基二极管并联集成,提出了一种具有高开/关比的自旋电子多级存储单元。由于对PMA MTJ的整流效应,在适当的交流和直流比例下,获得了超过100的开/关比,比固有值高两个数量级。稳定地实现了多个电阻状态,并且可以通过自旋转移矩效应进行重新配置。还评估了一种基于内存计算架构的DNN加速器,用于图像分类,并使用该提议的实验参数来证明其应用潜力。这项工作可以满足DNN对存储单元的严格要求,并促进高精度和强大的人工智能应用的发展。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4561/9069383/60c693586e5f/ADVS-9-2103357-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4561/9069383/b8e52f4910a6/ADVS-9-2103357-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4561/9069383/1faa11a094b0/ADVS-9-2103357-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4561/9069383/f603db187e98/ADVS-9-2103357-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4561/9069383/6683dc1b5570/ADVS-9-2103357-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4561/9069383/60c693586e5f/ADVS-9-2103357-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4561/9069383/b8e52f4910a6/ADVS-9-2103357-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4561/9069383/1faa11a094b0/ADVS-9-2103357-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4561/9069383/f603db187e98/ADVS-9-2103357-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4561/9069383/6683dc1b5570/ADVS-9-2103357-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4561/9069383/60c693586e5f/ADVS-9-2103357-g002.jpg

相似文献

1
High On/Off Ratio Spintronic Multi-Level Memory Unit for Deep Neural Network.用于深度神经网络的高开/关比自旋电子多电平存储单元
Adv Sci (Weinh). 2022 May;9(13):e2103357. doi: 10.1002/advs.202103357. Epub 2022 Feb 20.
2
All Spin Artificial Neural Networks Based on Compound Spintronic Synapse and Neuron.基于复合自旋电子突触和神经元的全自旋人工神经网络。
IEEE Trans Biomed Circuits Syst. 2016 Aug;10(4):828-36. doi: 10.1109/TBCAS.2016.2533798. Epub 2016 May 17.
3
In-memory direct processing based on nanoscale perpendicular magnetic tunnel junctions.基于纳米级垂直磁隧道结的内存直接处理。
Nanoscale. 2018 Dec 7;10(45):21225-21230. doi: 10.1039/c8nr05928d. Epub 2018 Nov 12.
4
Multistate Compound Magnetic Tunnel Junction Synapses for Digital Recognition.用于数字识别的多态复合磁隧道结突触
ACS Appl Mater Interfaces. 2024 Feb 28;16(8):10335-10343. doi: 10.1021/acsami.3c17195. Epub 2024 Feb 20.
5
Perpendicular Manganite Magnetic Tunnel Junctions Induced by Interfacial Coupling.界面耦合诱导的垂直锰氧化物磁性隧道结
ACS Appl Mater Interfaces. 2022 Mar 23;14(11):13883-13890. doi: 10.1021/acsami.1c24146. Epub 2022 Mar 11.
6
Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer.具有应变锰基纳米层的垂直磁隧道结
Sci Rep. 2016 Jul 26;6:30249. doi: 10.1038/srep30249.
7
Electric-field control of nonvolatile resistance state of perpendicular magnetic tunnel junction via magnetoelectric coupling.通过磁电耦合实现垂直磁隧道结非易失性电阻状态的电场控制。
Sci Adv. 2024 Apr 19;10(16):eadl4633. doi: 10.1126/sciadv.adl4633.
8
Multilayer ferromagnetic spintronic devices for neuromorphic computing applications.用于神经形态计算应用的多层铁磁自旋电子器件。
Nanoscale. 2024 Jul 4;16(26):12431-12444. doi: 10.1039/d4nr01003e.
9
Theoretical Study of Field-Free Switching in PMA-MTJ Using Combined Injection of STT and SOT Currents.使用自旋转移力矩(STT)和自旋轨道力矩(SOT)电流联合注入的垂直磁各向异性磁性隧道结(PMA-MTJ)中无场切换的理论研究
Micromachines (Basel). 2021 Oct 31;12(11):1345. doi: 10.3390/mi12111345.
10
Bimodal alteration of cognitive accuracy for spintronic artificial neural networks.自旋电子人工神经网络认知准确性的双峰变化
Nanoscale Horiz. 2024 Aug 19;9(9):1522-1531. doi: 10.1039/d4nh00097h.

引用本文的文献

1
Resistive Switching Behavior of Sol-Gel-Processed ZnMgO/ZnO Bilayer in Optoelectronic Devices.溶胶-凝胶法制备的ZnMgO/ZnO双层在光电器件中的电阻开关行为
Nanomaterials (Basel). 2025 Sep 3;15(17):1353. doi: 10.3390/nano15171353.
2
Analytical and empirical correlation between magnetic domain wall creep behavior and fundamental magnetic properties.磁畴壁蠕变行为与基本磁性能之间的分析和经验关联
Sci Rep. 2025 Apr 13;15(1):12741. doi: 10.1038/s41598-025-96871-1.
3
A Sliding-Kernel Computation-In-Memory Architecture for Convolutional Neural Network.

本文引用的文献

1
Spin-Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing.基于垂直磁隧道结的自旋扭矩忆阻器用于神经形态计算。
Adv Sci (Weinh). 2021 Mar 8;8(10):2004645. doi: 10.1002/advs.202004645. eCollection 2021 May.
2
Neuromorphic Spintronics.神经形态自旋电子学
Nat Electron. 2020;3(7). doi: 10.1038/s41928-019-0360-9.
3
Accurate deep neural network inference using computational phase-change memory.利用计算相变化内存实现精确的深度神经网络推理。
一种用于卷积神经网络的滑动内核内存计算架构。
Adv Sci (Weinh). 2024 Dec;11(46):e2407440. doi: 10.1002/advs.202407440. Epub 2024 Oct 22.
4
Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering.通过界面电荷工程解锁的铁电门控莫特晶体管中创纪录的高室温电阻开关特性。
Nat Commun. 2023 Dec 12;14(1):8247. doi: 10.1038/s41467-023-44036-x.
Nat Commun. 2020 May 18;11(1):2473. doi: 10.1038/s41467-020-16108-9.
4
Fully hardware-implemented memristor convolutional neural network.全硬件实现的忆阻器卷积神经网络。
Nature. 2020 Jan;577(7792):641-646. doi: 10.1038/s41586-020-1942-4. Epub 2020 Jan 29.
5
Simulation of Inference Accuracy Using Realistic RRAM Devices.使用逼真的电阻式随机存取存储器(RRAM)器件模拟推理精度
Front Neurosci. 2019 Jun 12;13:593. doi: 10.3389/fnins.2019.00593. eCollection 2019.
6
Ferroelectric Analog Synaptic Transistors.铁电模拟突触晶体管。
Nano Lett. 2019 Mar 13;19(3):2044-2050. doi: 10.1021/acs.nanolett.9b00180. Epub 2019 Feb 6.
7
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.在具有大隧道磁电阻的原子层厚度的钨工程化垂直磁隧道结中实现电流诱导的磁化反转。
Nat Commun. 2018 Feb 14;9(1):671. doi: 10.1038/s41467-018-03140-z.
8
Impact of RRAM Read Fluctuations on the Program-Verify Approach.电阻式随机存取存储器(RRAM)读取波动对编程验证方法的影响。
IEEE Electron Device Lett. 2017 Jun;38(6):736-739. doi: 10.1109/LED.2017.2696002. Epub 2017 May 2.
9
Neuromorphic computing with nanoscale spintronic oscillators.基于纳米级自旋电子振荡器的神经形态计算。
Nature. 2017 Jul 26;547(7664):428-431. doi: 10.1038/nature23011.
10
A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy.一种磁突触:具有垂直各向异性的多级自旋扭矩忆阻器。
Sci Rep. 2016 Aug 19;6:31510. doi: 10.1038/srep31510.