Wang Sihang, Zhang Liping
School of Materials Science and Physics, China University of Mining and Technology Xuzhou 221116 China
RSC Adv. 2025 Apr 17;15(16):12179-12190. doi: 10.1039/d5ra01106j. eCollection 2025 Apr 16.
This study explores the mechanical, optical, and thermoelectric properties of α-BaSnS and β-BaSnS through first-principles calculations. The mechanical analysis reveals that both structures exhibit ductile behaviour. Furthermore, phonon dispersion calculations at 0 K show no imaginary frequencies, confirming their dynamical stability. The electronic structure analysis identifies both compounds as indirect bandgap semiconductors, with a bandgap of 1.63 eV for α-BaSnS and 1.12 eV for β-BaSnS. Optical property analysis indicates that both compounds exhibit high absorption coefficients, reaching up to ∼10 cm in the ultraviolet region and approximately ∼10 cm in the visible spectrum, demonstrating their potential for optoelectronic applications. To explore the thermal transport properties, we calculated the lattice thermal conductivity using particle-like and wave-like transport channels. At 300 K, α-BaSnS exhibits an average of 1.030 W m K and of 0.112 W m K, whereas β-BaSnS exhibits average values of 0.128 W m K for and 0.179 W m K for . This reduction in β-BaSnS is primarily attributed to its pronounced anharmonicity and extremely short phonon lifetimes, which predominantly range from 0.1 to 1 ps. In terms of thermoelectric performance, α-BaSnS achieves a value of 1.05 at 600 K, while β-BaSnS achieves an even higher value of 1.06 under specific doping conditions. These results highlight the potential of the two phases of BaSnS for applications in thermoelectric and optoelectronic technologies.
本研究通过第一性原理计算探索了α-BaSnS和β-BaSnS的力学、光学和热电性能。力学分析表明,两种结构均表现出韧性行为。此外,在0 K下的声子色散计算未显示虚频,证实了它们的动力学稳定性。电子结构分析确定这两种化合物均为间接带隙半导体,α-BaSnS的带隙为1.63 eV,β-BaSnS的带隙为1.12 eV。光学性质分析表明,这两种化合物均表现出高吸收系数,在紫外区域高达10 cm,在可见光谱中约为10 cm,显示出它们在光电子应用中的潜力。为了探索热输运性质,我们使用类粒子和类波输运通道计算了晶格热导率。在300 K时,α-BaSnS的平均 为1.030 W m K, 为0.112 W m K,而β-BaSnS的 平均值为0.128 W m K, 为0.179 W m K。β-BaSnS的这种降低主要归因于其明显的非谐性和极短的声子寿命,其主要范围为0.1至1 ps。在热电性能方面,α-BaSnS在600 K时的 值为1.05,而β-BaSnS在特定掺杂条件下达到更高的 值1.06。这些结果突出了BaSnS的两个相在热电和光电子技术应用中的潜力。