Liu Chang, Tang Lin, Lv Yawei, Chen Long, Qin Yilu, Zhang Sen, Zhao Shihao, Ding Shuimei, Zhang Xin, Xu Pan, Ma Chao, Liu Xingqiang, Wang Fang, Wang Peng, Wang Xudong, Liu Yuan, Wang En-Ge, Liao Lei, Zou Xuming
Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, China.
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.
Nat Commun. 2025 Apr 23;16(1):3821. doi: 10.1038/s41467-025-59211-5.
Barrier detectors such as nBn and pBp architectures (formed by a n- or p-type contact layer, a barrier layer and a n- or p-type absorber) aim to block one carrier type while allowing the other to pass, but require complex hetero-integration and precise band engineering. Here, we propose an ultra-thin polar barrier strategy using a 0.75 nm water-intercalated WSe/HO/PdSe heterostructure. The confined water layer forms a clean, well-ordered interface and further generates a precisely oriented polarization field that depletes electrons in WSe, significantly suppressing dark current to sub-pA levels across all biases, while enabling efficient tunneling of photogenerated holes. The device shows broadband photoresponse from the ultraviolet to mid-wave infrared (MWIR), with a room-temperature average detectivity exceeding 10¹⁰ cm Hz¹² W⁻¹ in the MWIR. It also features ultrafast response (~3 μs), polarization light sensitivity, and two-year stability. Our work establishes a platform for high-performance infrared photodetection via van der Waals gap engineering.
诸如nBn和pBp架构（由n型或p型接触层、势垒层和n型或p型吸收层组成）的势垒探测器旨在阻挡一种载流子类型，同时允许另一种载流子通过，但需要复杂的异质集成和精确的能带工程。在此，我们提出一种使用0.75纳米水插层WSe/HO/PdSe异质结构的超薄极性势垒策略。受限水层形成一个干净、有序的界面，并进一步产生一个精确取向的极化场，该极化场耗尽WSe中的电子，在所有偏压下将暗电流显著抑制到亚皮安水平，同时使光生空穴能够有效隧穿。该器件显示出从紫外到中波红外（MWIR）的宽带光响应，在MWIR中室温平均探测率超过10¹⁰ cm Hz¹² W⁻¹。它还具有超快响应（~3微秒）、偏振光灵敏度和两年稳定性。我们的工作通过范德华间隙工程建立了一个用于高性能红外光探测的平台。
