Liang Qijie, Wang Qixing, Zhang Qian, Wei Jingxuan, Lim Sharon Xiaodai, Zhu Rui, Hu Junxiong, Wei Wei, Lee Chengkuo, Sow ChorngHaur, Zhang Wenjing, Wee Andrew Thye Shen
SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore.
Adv Mater. 2019 Jun;31(24):e1807609. doi: 10.1002/adma.201807609. Epub 2019 Apr 26.
Photodetection over a broad spectral range is crucial for optoelectronic applications such as sensing, imaging, and communication. Herein, a high-performance ultra-broadband photodetector based on PdSe with unique pentagonal atomic structure is reported. The photodetector responds from visible to mid-infrared range (up to ≈4.05 µm), and operates stably in ambient and at room temperature. It promises improved applications compared to conventional mid-infrared photodetectors. The highest responsivity and external quantum efficiency achieved are 708 A W and 82 700%, respectively, at the wavelength of 1064 nm. Efficient optical absorption beyond 8 µm is observed, indicating that the photodetection range can extend to longer than 4.05 µm. Owing to the low crystalline symmetry of layered PdSe , anisotropic properties of the photodetectors are observed. This emerging material shows potential for future infrared optoelectronics and novel devices in which anisotropic properties are desirable.
在诸如传感、成像和通信等光电应用中，宽光谱范围内的光探测至关重要。在此，报道了一种基于具有独特五角形原子结构的PdSe的高性能超宽带光电探测器。该光电探测器在可见光到中红外范围（高达约4.05 µm）内响应，并在环境和室温下稳定运行。与传统的中红外光电探测器相比，它有望实现更好的应用。在1064 nm波长处，实现的最高响应度和外量子效率分别为708 A/W和82700%。观察到在8 µm以上有高效的光吸收，表明光探测范围可以扩展到超过4.05 µm。由于层状PdSe的低晶体对称性，观察到了光电探测器的各向异性特性。这种新兴材料在未来红外光电子学和需要各向异性特性的新型器件方面显示出潜力。
