Suppr超能文献

双对齐hBN/石墨烯/hBN异质结构中的层间声子耦合和增强的电子-声子相互作用

Interlayer Phonon Coupling and Enhanced Electron-Phonon Interactions in Doubly Aligned hBN/Graphene/hBN Heterostructures.

作者信息

Kumar Anish, Solanki Darshit, Watanabe Kenji, Taniguchi Takashi, Sood A K, Das Anindya

机构信息

Undergraduate Programme, Indian Institute of Science, Bangalore 560012, India.

Department of Physics, Indian Institute of Science, Bangalore 560012, India.

出版信息

ACS Nano. 2025 May 6;19(17):16415-16423. doi: 10.1021/acsnano.4c17152. Epub 2025 Apr 25.

Abstract

Engineering the band structure via moiré superlattices plays a crucial role in tailoring the electronic and phononic spectra of hBN/graphene heterostructures, enabling a range of emergent properties. While moiré heterostructures have been extensively studied through transport measurements to investigate electronic spectra, their influence on the phononic spectrum, particularly on phonon-phonon and electron-phonon interactions, remains less explored. In this study, we examine the temperature-dependent (8 K-300 K) frequency and line width responses of the phonon near the K-point of graphene in hBN/graphene/hBN heterostructures for nonaligned, partially aligned, singly aligned, and doubly aligned configurations. The nonaligned samples, where the graphene is rotated by 30° with respect to both top and bottom hBN, exhibit pristine graphene behavior, characterized by minimal frequency variation with temperature and a typical line width increase with increasing temperature. In contrast, doubly aligned samples, where graphene and both hBN are perfectly aligned, display anomalous behavior, with the Raman frequency decreasing linearly and the lifetime increasing with increasing temperature. This anomalous anharmonic response could not be explained by the existing models considering only intralayer (within the graphene) phonon-phonon interactions, but rather indicates the role of strong interlayer phonon-phonon coupling (between hBN and graphene phonons), hitherto not observed. Furthermore, the enhanced electron-phonon interactions due to the resonant condition of phonon decay into electronic channels of doubly aligned hBN/graphene/hBN heterostructures explain the observed line width behavior. Our findings demonstrate the ability to engineer phonon-phonon and electron-phonon interactions through the precise alignment of hBN and graphene lattices, with implications for thermal management and carrier transport optimization in hBN/graphene/hBN heterostructures.

摘要

通过莫尔超晶格来调控能带结构在定制hBN/石墨烯异质结构的电子和声子谱方面起着关键作用,从而产生一系列新出现的特性。虽然莫尔异质结构已通过输运测量进行了广泛研究以探究电子谱,但它们对声子谱的影响,特别是对声子-声子和电子-声子相互作用的影响,仍较少被探索。在本研究中,我们研究了hBN/石墨烯/hBN异质结构中石墨烯K点附近声子在8 K至300 K温度范围内的频率和线宽响应,涉及未对齐、部分对齐、单对齐和双对齐配置。未对齐的样品中,石墨烯相对于顶部和底部hBN均旋转30°,表现出原始石墨烯的行为,其特征是频率随温度变化极小,且线宽随温度升高典型地增加。相比之下,双对齐的样品中,石墨烯与两个hBN均完美对齐,显示出异常行为,拉曼频率随温度升高线性下降,寿命增加。这种异常的非谐响应无法用仅考虑层内(石墨烯内部)声子-声子相互作用的现有模型来解释,而是表明了迄今未观察到的层间声子-声子强耦合(hBN和声子之间)的作用。此外,由于双对齐的hBN/石墨烯/hBN异质结构中声子衰变为电子通道的共振条件导致的增强的电子-声子相互作用解释了观察到的线宽行为。我们的研究结果表明,通过精确对齐hBN和石墨烯晶格能够调控声子-声子和电子-声子相互作用,这对hBN/石墨烯/hBN异质结构中的热管理和载流子输运优化具有重要意义。

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验