Li Jiacheng, Wang Junpeng, Peng Chunrong, Liu Wenjie, Luo Jiahao, Wu Zhengwei, Ren Ren, Lv Yao
State Key Laboratory of Transducer Technology, Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100190, China.
University of Chinese Academy of Sciences, Beijing 100049, China.
Micromachines (Basel). 2025 Mar 27;16(4):381. doi: 10.3390/mi16040381.
To mitigate the three-dimensional (3D) coupling interference of electric field sensors, a novel MEMS 3D electric field sensor with a dual-orthogonal induction structure and its spatial decoupling method is proposed. The sensor is designed with a cylindrical structure, in which two pairs of induction electrodes are orthogonally arranged to suppress common-mode interference. MEMS electric field sensing chips are utilized to achieve 3D electric field measurement. Furthermore, a spatial decoupling calibration model is established based on the structural characteristics of the sensor. The Cramér-Rao lower bound of the linear model is calculated to obtain the optimal decoupled calibration matrix, enabling precise 3D electric field decoupling. Experimental results showed that within an electric field range of 0-50 kV/m, the linearity of the three decoupled electric field components was 2.60%, 1.20%, and 1.78%, respectively, while the synthesized electric field achieved a linearity of 0.74% with a maximum full-scale error of 0.80%. Under varying angles and field intensities, the maximum and average relative errors of the decoupled synthesized electric field were 1.20% and 0.43%, respectively, representing reductions of 61.8% and 56.1% compared to the conventional matrix inversion method. These results confirmed that the proposed method effectively suppressed coupling interference and enhanced 3D electric field measurement accuracy.
为了减轻电场传感器的三维（3D）耦合干扰，提出了一种具有双正交感应结构的新型MEMS 3D电场传感器及其空间去耦方法。该传感器采用圆柱形结构设计，其中两对感应电极正交排列以抑制共模干扰。利用MEMS电场传感芯片实现3D电场测量。此外，基于传感器的结构特性建立了空间去耦校准模型。计算线性模型的克拉美罗下界以获得最佳去耦校准矩阵，从而实现精确的3D电场去耦。实验结果表明，在0-50 kV/m的电场范围内，三个去耦电场分量的线性度分别为2.60%、1.20%和1.78%，而合成电场的线性度为0.74%，最大满量程误差为0.80%。在不同角度和场强下，去耦合成电场的最大相对误差和平均相对误差分别为1.20%和0.43%，与传统矩阵求逆方法相比分别降低了61.8%和56.1%。这些结果证实了所提出的方法有效地抑制了耦合干扰并提高了3D电场测量精度。
