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预处理得到三维结晶聚(3-己基噻吩)结构。

Preprocessing Affords 3D Crystalline Poly(3-hexylthiophene) Structure.

作者信息

Sun Mengting, Sun Zeyuan, Zheng Yulong, Kim Russell, Liu Aaron L, Richter Lee J, Gilchrist James F, Reichmanis Elsa

机构信息

Department of Chemical and Biomolecular Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, United States.

School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.

出版信息

Chem Mater. 2025 Apr 2;37(8):2795-2805. doi: 10.1021/acs.chemmater.4c03392. eCollection 2025 Apr 22.

Abstract

The aggregation and crystallization of poly(3-hexylthiophene-2,5-diyl) (P3HT), a representative active layer material used for organic field-effect transistor (OFET) applications, are influenced by the solution pretreatment and deposition process. This study explores vibration-assisted convective deposition for the fabrication of OFETs in comparison to spin coating, blade coating, and convective deposition without vibration. The ultraviolet-visible spectroscopic analysis demonstrates that convective deposition, especially assisted with vibration, leads to a greater degree of intrachain interactions, longer conjugation length, and enhanced polymer backbone planarization. When the P3HT solution is preprocessed via sonication and aging, the P3HT films exhibit J-like aggregation, and (h11) peaks can be observed through grazing-incidence wide-angle X-ray scattering, suggesting an ordered 3D crystalline structure. OFETs based on such films exhibit high mobilities (up to 0.14 cm V s). The results point to the sensitivity of P3HT charge transport behavior to the intramolecular interactions and backbone planarity and further deepen our understanding of the relationship between processing, aggregates, molecular ordering, and resultant device properties.

摘要

聚(3-己基噻吩-2,5-二亚基)(P3HT)是用于有机场效应晶体管(OFET)应用的一种代表性活性层材料,其聚集和结晶受到溶液预处理和沉积过程的影响。本研究探索了与旋涂、刮刀涂布以及无振动的对流沉积相比,振动辅助对流沉积用于制造OFET的情况。紫外可见光谱分析表明,对流沉积,尤其是振动辅助的对流沉积,会导致更大程度的链内相互作用、更长的共轭长度以及增强的聚合物主链平面化。当P3HT溶液通过超声处理和老化进行预处理时,P3HT薄膜呈现出J型聚集,并且通过掠入射广角X射线散射可以观察到(h11)峰,表明存在有序的三维晶体结构。基于此类薄膜的OFET表现出高迁移率(高达0.14 cm² V⁻¹ s⁻¹)。这些结果表明P3HT电荷传输行为对分子内相互作用和主链平面性的敏感性,并进一步加深了我们对加工、聚集体、分子有序性以及所得器件性能之间关系的理解。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/38f5/12020000/e13fcc6a71b6/cm4c03392_0001.jpg

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