Sunny Fency, Parambil Priyakumari Chakkingal, Kalarikkal Nandakumar, Balakrishnan Subila Kurukkal
International and Inter University Centre for Nanoscience and Nanotechnology, Mahatma Gandhi University, Kottayam, Kerala, 686 560, India.
Department of Chemical Sciences, Indian Institute of Science Education and Research Mohali, Mohali, India.
Small. 2025 Jun;21(25):e2501147. doi: 10.1002/smll.202501147. Epub 2025 May 2.
Cesium bismuth bromide (CBB) provides a compelling lead free, non-toxic alternative in perovskite optoelectronic applications. Doping with transition metal has been employed for the improvement of photophysical characteristics in perovskites. In this study, the incorporation of heterovalent Zn ions in CBB nanosheets and its effect on the structural, morphological, linear, and non-linear properties are investigated. Zn doping leads to a decrease in lattice strain and crystallite size eliciting a reduction in the nanosheet dimension. Combined with the morphological alteration, incorporation of Zn results in an enhancement in the UV absorbance cross section of CBB and a reduction in Urbach energy brought on by the shallow defect passivation. The electronic states of the new systems probed using first principle studies pointed to the formation of new states in the conduction band. This instigates an enhancement of third-order optical non-linearity in the perovskites. The two-photon absorption coefficient increased by a factor of three and the optical limiting threshold is reduced to half, upon incorporation of optimal amount of Zn. This study on the effects of heterovalent substitution in lead free perovskites, in modifying the electronic states and the optical properties points to augmenting novel optoelectronic applications.
溴化铯铋(CBB)在钙钛矿光电器件应用中提供了一种引人注目的无铅、无毒替代物。通过掺杂过渡金属来改善钙钛矿的光物理特性。在本研究中,研究了在CBB纳米片中引入异价Zn离子及其对结构、形态、线性和非线性性质的影响。Zn掺杂导致晶格应变和微晶尺寸减小,从而使纳米片尺寸减小。结合形态变化,Zn的引入导致CBB的紫外吸收截面增加,并且由于浅缺陷钝化导致乌尔巴赫能量降低。使用第一性原理研究探测的新体系的电子态表明在导带中形成了新的态。这促使钙钛矿中的三阶光学非线性增强。掺入适量的Zn后,双光子吸收系数增加了两倍,光学限幅阈值降低到一半。这项关于无铅钙钛矿中异价取代对电子态和光学性质影响的研究表明,新型光电器件应用将得到拓展。