Yan Zhiqing, Gao Peng, Li Zhong, Zhang Ying, Hu Chuangang, Cao Dong, Cheng Daojian
State Key Laboratory of Organic-Inorganic Composites and College of Chemical Engineering, Beijing University of Chemical Technology, Beijing, 100029, China.
Small. 2025 Jun;21(25):e2500950. doi: 10.1002/smll.202500950. Epub 2025 May 6.
Rapid construction of highly active non-precious metal catalysts for electrochemical CO reduction reaction (CORR) to C products is still challenging. Under the guidance of theoretical calculation, the CuO(200)/Cu(111) is screened heterogeneous catalyst which is favorable for arduous CO activation and unstable CO adsorption during the electrochemical CORR. Then, a novel CuO(200)/Cu(111) heterogeneous interface is fabricated by an ambient precipitation coupled chemical reduction strategy. Notably, the obtained CuO/Cu exhibits excellent activity for CORR, which FE is 82.98% under the industrial current density of 450 mA cm in membrane electrode assembly cell. In situ X-ray photoelectron spectroscopy combined with spherical aberration correction electron microscope reveals CuO/Cu interface exhibits the excellent structural durability. Furthermore, in situ Raman and in situ attenuated total reflection-surface-enhanced IR absorption spectroscopy directly capture COOH, CHO, and COCHO intermediates, disclosing the formation of the C products involves in the COCHO pathway. Mechanism studies demonstrate the presence of charge aggregation at CuO/Cu interface directly reduces the energy barrier for C─C coupling (rate-determining step) to 0.76 eV. This work developed a highly active heterogeneous interface for CORR, which provides a novel insight for the fabrication of Cu-based catalysts.
快速构建用于电化学CO还原反应(CORR)生成C产物的高活性非贵金属催化剂仍然具有挑战性。在理论计算的指导下,筛选出了CuO(200)/Cu(111)异质催化剂,该催化剂有利于在电化学CORR过程中进行艰难的CO活化和不稳定的CO吸附。然后,通过常压沉淀耦合化学还原策略制备了一种新型的CuO(200)/Cu(111)异质界面。值得注意的是,所制备的CuO/Cu对CORR表现出优异的活性,在膜电极组装电池中,在450 mA cm的工业电流密度下,其法拉第效率为82.98%。原位X射线光电子能谱结合球差校正电子显微镜表明,CuO/Cu界面具有优异的结构耐久性。此外,原位拉曼光谱和原位衰减全反射-表面增强红外吸收光谱直接捕获了COOH、CHO和COCHO中间体,揭示了C产物的形成涉及COCHO途径。机理研究表明,CuO/Cu界面处电荷聚集的存在直接将C─C偶联(速率决定步骤)的能垒降低至0.76 eV。这项工作开发了一种用于CORR的高活性异质界面,为铜基催化剂的制备提供了新的见解。