Taher Abu, Rahman M Atikur, Mia Rana, Uddin Nasir, Islam Mustavi, Khan M N I, Alam M Khurshed, Alim Mohammad A
Department of Electrical and Electronic Engineering, University of Chittagong Chittagong-4331 Bangladesh
Department of Electrical and Computer Engineering, University of Missouri Kansas City Missouri USA.
RSC Adv. 2025 May 6;15(18):14428-14462. doi: 10.1039/d4ra08307e. eCollection 2025 Apr 28.
With the rise of digital technology, the use of memory devices is swiftly expanding, and this trend is expected to continue in the forthcoming years. Accordingly, researchers are exploring materials that surpass the performance of those used in traditional memory devices, and notably, there is a considerable interest in quantum dots (QDs). This is primarily due to the fact that quantum dots possess exceptional optical and electric properties. As a result, they have become appealing materials to enhance the performance of non-volatile memory devices. In this review, we outlined the various approaches employed for the synthesis of quantum dots as well as different types of quantum dots used for prototyping different non-volatile memory technologies and their current perspective. Additionally, we compared various key parameters, such as the ON/OFF ratio, retention time, memory window, charge trapping capacity, and multiple voltage levels, of these QD-based memories together with future outlook.
随着数字技术的兴起，存储设备的使用正在迅速扩展，并且预计这一趋势在未来几年将持续。因此，研究人员正在探索性能超越传统存储设备所用材料的材料，值得注意的是，量子点（QDs）引起了相当大的关注。这主要是因为量子点具有卓越的光学和电学性质。因此，它们已成为提高非易失性存储设备性能的有吸引力的材料。在这篇综述中，我们概述了用于合成量子点的各种方法，以及用于不同非易失性存储技术原型制作的不同类型量子点及其当前前景。此外，我们比较了这些基于量子点的存储器的各种关键参数，如开/关比、保留时间、存储窗口、电荷俘获能力和多电压电平，以及未来展望。
