Hou Xiang, Zhang Heng, Liu Chunsen, Ding Shijin, Bao Wenzhong, Zhang David Wei, Zhou Peng
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Small. 2018 May;14(20):e1800319. doi: 10.1002/smll.201800319. Epub 2018 Apr 17.
Recently, layered ultrathin 2D semiconductors, such as MoS and WSe are widely studied in nonvolatile memories because of their excellent electronic properties. Additionally, discrete 0D metallic nanocrystals and quantum dots (QDs) are considered to be outstanding charge-trap materials. Here, a charge-trap memory device based on a hybrid 0D CdSe QD-2D WSe structure is demonstrated. Specifically, ultrathin WSe is employed as the channel of the memory, and the QDs serve as the charge-trap layer. This device shows a large memory window exceeding 18 V, a high erase/program current ratio (reaching up to 10 ), four-level data storage ability, stable retention property, and high endurance of more than 400 cycles. Moreover, comparative experiments are carried out to prove that the charges are trapped by the QDs embedded in the Al O . The combination of 2D semiconductors with 0D QDs opens up a novelty field of charge-trap memory devices.
最近，诸如MoS和WSe等层状超薄二维半导体因其优异的电子特性而在非易失性存储器中得到广泛研究。此外，离散的零维金属纳米晶体和量子点（QDs）被认为是出色的电荷俘获材料。在此，展示了一种基于混合零维CdSe量子点-二维WSe结构的电荷俘获存储器件。具体而言，超薄WSe被用作存储器的通道，量子点用作电荷俘获层。该器件显示出超过18 V的大存储窗口、高达10的高擦除/编程电流比、四级数据存储能力、稳定的保持特性以及超过400次循环的高耐久性。此外，进行了对比实验以证明电荷被嵌入AlO中的量子点俘获。二维半导体与零维量子点的结合开辟了电荷俘获存储器件的新领域。
