Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China.
Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China.
Chem Rev. 2020 May 13;120(9):3941-4006. doi: 10.1021/acs.chemrev.9b00730. Epub 2020 Mar 23.
The continued growth in the demand of data storage and processing has spurred the development of high-performance storage technologies and brain-inspired neuromorphic hardware. Semiconductor quantum dots (QDs) offer an appealing option for these applications since they combine excellent electronic/optical properties and structural stability and can address the requirements of low-cost, large-area, and solution-based manufactured technologies. Here, we focus on the development of nonvolatile memories and neuromorphic computing systems based on QD thin-film solids. We introduce recent advances of QDs and highlight their unique electrical and optical features for designing future electronic devices. We also discuss the advantageous traits of QDs for novel and optimized memory techniques in both conventional flash memories and emerging memristors. Then, we review recent advances in QD-based neuromorphic devices from artificial synapses to light-sensory synaptic platforms. Finally, we highlight major challenges for commercial translation and consider future directions for the postsilicon era.
对数据存储和处理需求的持续增长推动了高性能存储技术和类脑神经形态硬件的发展。半导体量子点 (QD) 为这些应用提供了一个有吸引力的选择,因为它们结合了优异的电子/光学特性和结构稳定性,并且可以满足低成本、大面积和基于溶液制造技术的要求。在这里,我们专注于基于 QD 薄膜固体的非易失性存储器和神经形态计算系统的开发。我们介绍了 QD 的最新进展,并强调了它们独特的电学和光学特性,用于设计未来的电子设备。我们还讨论了 QD 在传统闪存和新兴忆阻器中新型和优化的存储技术的优势。然后,我们回顾了基于 QD 的神经形态器件从人工突触到光感突触平台的最新进展。最后,我们强调了商业转化的主要挑战,并考虑了后硅时代的未来发展方向。