Greig Shawn R, Firby Curtis J, Muneshwar Triratna, Alagöz Serhat, Hopmann Eric, Carnio Brett N, Zhang Mingyuan, Ciarniello Grace, Cadien Kenneth, Elezzabi Abdulhakem Y
Department of Electrical and Computer Engineering, University of Alberta, Edmonton T6G 2V4, Canada.
Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Bombay 400-076, India.
Sci Adv. 2025 May 9;11(19):eadr1172. doi: 10.1126/sciadv.adr1172.
The rapid increase in data generation and storage poses substantial challenges, necessitating a transition from traditional charge-based devices to high-speed optical alternatives for computational tasks. Photon-assisted or plasmon-assisted memory devices emerge as promising solutions for facilitating faster read/write operations. By using surface plasmon polaritons for writing operations, we can dynamically read memory states through the measurement of tunneling currents in thin layers of HfO ferroelectric materials sandwiched between Au thin film electrodes. Our plasmon-addressable memory platform offers versatile functionality in both nanoelectronic and nanoplasmonic systems, demonstrating a robust hybrid architecture with transformative potential for computing and data processing applications.
数据生成和存储的快速增长带来了巨大挑战，这使得从传统的基于电荷的设备向用于计算任务的高速光学替代设备过渡成为必要。光子辅助或等离子体辅助存储设备成为促进更快读/写操作的有前途的解决方案。通过使用表面等离子体激元进行写入操作，我们可以通过测量夹在金薄膜电极之间的HfO铁电材料薄层中的隧穿电流来动态读取存储状态。我们的等离子体可寻址存储平台在纳米电子和纳米等离子体系统中都具有多功能性，展示了一种强大的混合架构，对计算和数据处理应用具有变革潜力。
