Department of Applied Physics, The Benin School of Engineering and Computer Science, The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem , Israel , 91904.
Nano Lett. 2013;13(12):6151-5. doi: 10.1021/nl403486x. Epub 2013 Nov 22.
We experimentally demonstrate for the first time a nanoscale resistive random access memory (RRAM) electronic device integrated with a plasmonic waveguide providing the functionality of optical readout. The device fabrication is based on silicon on insulator CMOS compatible approach of local oxidation of silicon, which enables the realization of RRAM and low optical loss channel photonic waveguide at the same fabrication step. This plasmonic device operates at telecom wavelength of 1.55 μm and can be used to optically read the logic state of a memory by measuring two distinct levels of optical transmission. The experimental characterization of the device shows optical bistable behavior between these levels of transmission in addition to well-defined hysteresis. We attribute the changes in the optical transmission to the creation of a nanoscale absorbing and scattering metallic filament in the amorphous silicon layer, where the plasmonic mode resides.
我们首次实验证明了一种纳米级电阻式随机存取存储器（RRAM）电子器件与等离子体波导集成，提供了光学读出的功能。该器件的制造基于绝缘体上硅的局部氧化硅的 CMOS 兼容方法，这使得 RRAM 和低光学损耗通道光子波导能够在同一制造步骤中实现。这种等离子体器件在电信波长 1.55μm 下工作，可通过测量两个不同的光传输水平来光学读取存储器的逻辑状态。该器件的实验特性表明，在这两个传输水平之间存在光学双稳行为，此外还有明确的滞后现象。我们将光传输的变化归因于在等离子体模式所在的非晶硅层中创建纳米级的吸收和散射金属丝。
