Rai Banik, Patra Krishnendu, Bera Satyabrata, Kalimuddin Sk, Deb Kakan, Mondal Mintu, Mahadevan Priya, Kumar Nitesh
Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Salt Lake City, Kolkata, 700106, India.
School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata, 700032, India.
Adv Sci (Weinh). 2025 Jul;12(27):e2502226. doi: 10.1002/advs.202502226. Epub 2025 May 8.
CrSb has recently gained immense attention as an altermagnetic candidate. This work reports on the experimental observation of direction-dependent conduction polarity (DDCP) in altermagnetic CrSb through Hall and Seebeck thermopower measurements. Conduction is dominated by holes along the -axis and by electrons in the -plane of the hexagonal crystal of CrSb. Density functional theory (DFT) calculations indicate that DDCP in CrSb arises from a multicarrier mechanism, where electrons and holes living in distinct bands dominate conduction along different crystallographic directions. Furthermore, DFT predicts that DDCP exists within a narrow energy window near the Fermi level and is sensitive to small doping levels. This prediction is experimentally validated by the loss of DDCP in hole-doped CrVSb. These findings highlight the potential for tunable electronic behavior in CrSb, offering promising avenues for applications in devices that require both p-type and n-type functionalities within a single material.
CrSb最近作为一种反磁性候选材料受到了极大关注。这项工作通过霍尔和塞贝克热功率测量报告了反磁性CrSb中方向依赖传导极性(DDCP)的实验观察结果。在CrSb的六方晶体中,沿c轴的传导以空穴为主,而在ab平面中以电子为主。密度泛函理论(DFT)计算表明,CrSb中的DDCP源于多载流子机制,其中处于不同能带的电子和空穴在不同晶体学方向上主导传导。此外,DFT预测DDCP存在于费米能级附近的一个狭窄能量窗口内,并且对小的掺杂水平敏感。这一预测通过空穴掺杂的CrVSb中DDCP的消失得到了实验验证。这些发现突出了CrSb中可调电子行为的潜力,为在单一材料中需要p型和n型功能的器件应用提供了有前景的途径。