Peng Lucheng, Wang Yongjie, Rodà Carmelita, Malla Aditya, Dosil Miguel, Mandal Debranjan, Konstantatos Gerasimos
ICFO-Insitut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona, 08860, Spain.
ICREA-Institució Catalana de Recerca i Estudiats Avançats, Lluis Companys 23, Barcelona, 08010, Spain.
Adv Sci (Weinh). 2025 Jul;12(27):e2502775. doi: 10.1002/advs.202502775. Epub 2025 May 8.
Environmentally friendly InSb colloidal quantum dots (CQDs) short-wave infrared (SWIR) photodetectors feature characteristics of low-cost, high-volume scalability, CMOS integrability, and compliance with RoHS regulations, and hold great commercial potential. Yet, their performance falls short of commercially relevant specifications. In this work, it is posited that CQD fusion observed in these dots leads to the formation of band-tail trap states and it is further demonstrated that avoidance of such band-tail trap states is crucial for device performance. By doing so, InSb CQDs SWIR photodetectors are reported with compelling performance metrics, including a dark current of 4 µA cm, EQE of ≈20% (at -1 V), a linear dynamic range over 140 dB and a response time of 90 ns. This represents a more than ten-fold reduction in dark current compared to previously report InSb CQD photodetectors in the SWIR range. The record high PLQY of 10% for InSb/InP CQDs taken together with the high EQE of the device at zero bias confirm the achievement of high-quality InSb CQDs through the suppression of band-tail trap states and passivation of surface defects.
环境友好型锑化铟胶体量子点（CQD）短波红外（SWIR）光电探测器具有低成本、高产量可扩展性、CMOS集成性以及符合RoHS法规等特点，具有巨大的商业潜力。然而，它们的性能仍未达到商业相关规格。在这项工作中，据推测在这些量子点中观察到的CQD融合会导致带尾陷阱态的形成，并且进一步证明避免此类带尾陷阱态对于器件性能至关重要。通过这样做，报道了具有令人信服的性能指标的锑化铟CQD SWIR光电探测器，包括4 μA cm的暗电流、≈20%的外量子效率（EQE，在-1 V时）、超过140 dB的线性动态范围和90 ns的响应时间。与之前报道的SWIR范围内的锑化铟CQD光电探测器相比，这代表暗电流降低了十倍以上。锑化铟/磷化铟CQD创纪录的10%的高量子产率（PLQY）以及器件在零偏压下的高EQE共同证实了通过抑制带尾陷阱态和钝化表面缺陷实现了高质量的锑化铟CQD。
