Duan Chenghao, Hu Mingyu, Zhu Qiliang, Li Shiang, Liu Ning, Zhang Zheng, Ding Liming, Qiu Jianhang, Guo Lin, Lu Xinhui, Yang Shihe, Yan Keyou
School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Basic Research Center of Excellence for Energy and Information Polymer Materials, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, China, 510000.
School of Energy Science and Technology, Henan University, Zhengzhou, China, 450000.
Angew Chem Int Ed Engl. 2025 Jul;64(29):e202507761. doi: 10.1002/anie.202507761. Epub 2025 May 19.
The poor performance of inorganic narrow bandgap perovskite solar cells (PSCs) hinders the development of inorganic perovskite tandem solar cells (IPTSCs). We modulate the crystallization and photothermal aging chemistry for CsPbSnI (1.31 eV) with guanidinoacetic acid (GCA) to develop IPTSC. The CsPbSnI:GCA PSC reaches an efficiency of 16.93% and maintains an initial efficiency of ∼80% (T) for 1300 h under maximum power point tracking (MPPT) at 65 °C. We identify that there are not only ionic migration species (I, I ) but also molecular migration species (SnI, I) for CsPbSnI correlated to the photothermal dynamics. For CsPbSnI film, the intractable pinholes accelerate the iodine migration to the electrode and photothermal degradation. The photodegradation of PbI produces I and then promotes the Sn oxidation to Sn, causing tin migration in the form of SnI to accumulate at the electron transport layer/perovskite interface, and in turn generating more pinholes and Sn-Pb segregation. In CsPbSnI:GCA film, due to the coordination bonds with Pb/Sn cations and hydrogen bonds with I ions, GCA incorporation-induced pinhole-free morphology can significantly suppress ion/molecule migration. Combined with CsPbIBr subcell, two-terminal IPTSC delivers an efficiency of 22.18%, accompanied by T = 850 h under MPPT at 65 °C.
无机窄带隙钙钛矿太阳能电池(PSC)的性能不佳阻碍了无机钙钛矿串联太阳能电池(IPTSC)的发展。我们用胍基乙酸(GCA)调节CsPbSnI(1.31 eV)的结晶和光热老化化学过程,以开发IPTSC。CsPbSnI:GCA PSC的效率达到16.93%,并在65°C的最大功率点跟踪(MPPT)下保持约80%(T)的初始效率1300小时。我们发现,与光热动力学相关的CsPbSnI不仅存在离子迁移物种(I、I ),还存在分子迁移物种(SnI、I)。对于CsPbSnI薄膜,难以处理的针孔加速了碘向电极的迁移和光热降解。PbI的光降解产生I,然后促进Sn氧化为Sn,导致以SnI形式的锡迁移在电子传输层/钙钛矿界面处积累,进而产生更多针孔和Sn-Pb偏析。在CsPbSnI:GCA薄膜中,由于与Pb/Sn阳离子的配位键和与I离子的氢键,GCA掺入诱导的无针孔形态可以显著抑制离子/分子迁移。结合CsPbIBr子电池,两端IPTSC的效率为22.18%,在65°C的MPPT下T = 850小时。