Pineda-Domínguez Pamela M, Boll Torben, Hurtado-Macias Abel, Talamantes-Soto Roberto, Nogan John, Heilmaier Martin, Enriquez-Carrejo José Luis, Chassaing Delphine, Velazquez-Rizo Martin, Trimmer-Duarte Jorge Luis, Kante Mohana Veerraju, Ramos Manuel
Institut für Angewandte Materialien-Werkstoffkunde (IAM-WK), Karlsruhe Institute of Technology, Engelbert-Arnold-Strasse 4, Karlsruhe 76131, Germany.
Karlsruhe Nano Micro Facility (KNMFi), Karlsruhe Institute of Technology (KIT), Campus Nord H.-von-Helmholtz-Platz 1, Eggenstein-Leopoldshafen 76344, Germany.
ACS Omega. 2025 Apr 25;10(17):17249-17256. doi: 10.1021/acsomega.4c09280. eCollection 2025 May 6.
Tungsten trioxide (WO) is an intrinsic -type semiconductor that can be prepared to exhibit a piezoresponse through doping and heat treatment strategies. We report the piezoresponse in platinum-doped WO thin films, prepared by RF/DC cosputtering, followed by postdeposition annealing at 600 °C. Measurements using Switching Spectroscopy Piezo Force Microscopy (SS-PFM) reveal domains with different polarization orientations and hysteresis behavior, corresponding to a piezoelectric coefficient of = 97 ± 6 pmV. Low-angle x-ray diffraction (XRD) indicates the presence of an orthorhombic structure (β-WO) with a space group, while Scanning Transmission Electron Microscopy (STEM) reveals the formation of platinum nanoparticles (∼5 nm) with a cubic structure ( ). Atom Probe Tomography (APT) confirms the formation of Pt nanoparticles and Ar-enriched cavities within the WO matrix induced by the annealing process. These structural modifications create lattice strain, giving rise to piezoelectric domains with different polarization orientations.
三氧化钨（WO）是一种本征型半导体，可通过掺杂和热处理策略制备以表现出压电响应。我们报道了通过射频/直流共溅射制备、随后在600°C进行沉积后退火的铂掺杂WO薄膜中的压电响应。使用开关光谱压电显微镜（SS-PFM）进行的测量揭示了具有不同极化取向和滞后行为的畴，对应于压电系数d33 = 97±6 pmV。低角度X射线衍射（XRD）表明存在具有空间群的正交结构（β-WO），而扫描透射电子显微镜（STEM）揭示了形成具有立方结构（ ）的铂纳米颗粒（约5 nm）。原子探针断层扫描（APT）证实了退火过程在WO基体中诱导形成了Pt纳米颗粒和富氩空洞。这些结构改性产生晶格应变，从而产生具有不同极化取向的压电畴。
