钝化碳化硅活性氧化过程中超长二氧化硅纳米线的快速生长

Fast Growth of Ultralong Silica Nanowires during Active Oxidation of Passivated Silicon Carbide.

作者信息

Nishimura Yosuke, Gubarevich Anna, Yoshida Katsumi, Okamoto Koji

机构信息

The Department of Nuclear Engineering and Management, Graduate School of Engineering, The University of Tokyo, 7-3-1, Bunkyo-Ku, Hongo, Tokyo 113-8654, Japan.

Institute of Integrated Research, Institute of Science Tokyo, Laboratory for Zero-Carbon Energy, 2-12-1, Meguro-Ku, Ookayama, Tokyo 152-8550, Japan.

出版信息

ACS Omega. 2025 Apr 25;10(17):17435-17440. doi: 10.1021/acsomega.4c10702. eCollection 2025 May 6.

DOI:10.1021/acsomega.4c10702

PMID:40352561

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12059895/

Abstract

We report the fast vapor-liquid-solid growth of silica nanowires through active oxidation and corrosion of a passivated silicon carbide (SiC) substrate. Silica nanowires are formed from SiO gas generated during the active oxidation of SiC and supplied from the corrosion region. SiO gas is continuously absorbed by Si-Mo nanoparticles formed in the passivated region, leading to the production of ultralong nanowires in large quantities. This study demonstrates a nonequilibrium chemical pump effect that enhances silica nanowire growth by coupling the active oxidation of SiC with silica-oxide-assisted nucleation on the well-passivated SiC substrate.

摘要

我们报道了通过对钝化碳化硅（SiC）衬底进行活性氧化和腐蚀来实现二氧化硅纳米线的快速气-液-固生长。二氧化硅纳米线由SiC活性氧化过程中产生并从腐蚀区域供应的SiO气体形成。SiO气体被钝化区域中形成的Si-Mo纳米颗粒持续吸收，从而大量生产超长纳米线。本研究展示了一种非平衡化学泵效应，该效应通过将SiC的活性氧化与在良好钝化的SiC衬底上的二氧化硅辅助成核相结合来增强二氧化硅纳米线的生长。