Zhan Changling, Luo Chao, Gao Feng, Wang Xianjin, Gao Peng, Ma Yabin, Wang Keli, He Jiandong, Bi Zhuye, Ma Yingzhuang, Zhao Qing
State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China.
Solar Energy Research Institute of Singapore (SERIS), National University of Singapore, Singapore, 117574, Singapore.
Small. 2025 Jul;21(29):e2502989. doi: 10.1002/smll.202502989. Epub 2025 May 20.
The interfaces of perovskite film are most susceptible to degradation during perovskite solar cell (PSC) operation. Previous efforts mainly focused on the degradation pathways of either independent upper or buried interfaces, while thorough and meticulous consideration of the disparity in electrical bias and light field difference between these interfaces during operation still remains unexplored. Herein, it is uncovered that the electrical bias significantly influences the operation degradation of perovskite interfaces in both n-i-p and p-i-n PSCs. More pronounced degradation has been found at the positive bias interface (perovskite/hole transporting layer interface) compared to the negative bias interface (perovskite/electron transporting layer interface). In the case of n-i-p PSCs, more severe degradation is mainly due to the electrochemical oxidation reaction catalyzed by diffused gold with high concentration of photogenerated holes at the positive bias interface. For p-i-n PSCs, the electrochemical oxidation reaction still occurs at the positive bias interface, inducing direct oxidation of silver with iodine species and photogenerated holes into silver iodide. Moreover, the incident light synergistically contributes to positive bias interface degradation in p-i-n PSCs. This work provides valuable guidance for understanding the degradation mechanism of different perovskite interfaces under different physical and chemical environment during device operation.
在钙钛矿太阳能电池(PSC)运行过程中,钙钛矿薄膜的界面最容易发生降解。以往的研究主要集中在独立的上界面或埋入界面的降解途径,而在运行过程中对这些界面之间的电偏压和光场差异的差异进行全面细致的考虑仍未得到探索。在此,研究发现电偏压对n-i-p和p-i-n PSC中钙钛矿界面的运行降解有显著影响。与负偏压界面(钙钛矿/电子传输层界面)相比,在正偏压界面(钙钛矿/空穴传输层界面)发现了更明显的降解。在n-i-p PSC中,更严重的降解主要是由于在正偏压界面处由具有高浓度光生空穴的扩散金催化的电化学氧化反应。对于p-i-n PSC,电化学氧化反应仍发生在正偏压界面,导致银与碘物种和光生空穴直接氧化成碘化银。此外,入射光协同促进了p-i-n PSC中正偏压界面的降解。这项工作为理解器件运行过程中不同物理和化学环境下不同钙钛矿界面的降解机制提供了有价值的指导。