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低温下石墨烯的生长与解离的α-萘酚的活性六原子芳香环物种。 (原英文文本表述较模糊,翻译出来的中文句子也不太完整通顺,推测可能是想表达“低温下石墨烯的生长与解离的α-萘酚的活性六原子芳香环物种有关”之类的意思,但仅依据所给原文只能这样翻译。)

Low-temperature, growth of graphene the active hexatomic aromatic ring species of dissociated α-naphthol.

作者信息

Tian Caijiao, Zhang Yi, Zhou Meng, Zhang Shiding, Tian Baohong, Chu Chunhe, Jing Ke

机构信息

Henan University of Science and Technology, School of Materials Science and Engineering 263, Kaiyuan Avenue Luoyang China

Anyang Institute of Technology, School of Materials Science and Engineering Huanghe Avenue Anyang China.

出版信息

RSC Adv. 2025 May 21;15(22):17080-17088. doi: 10.1039/d5ra01718a.

Abstract

Using small-molecule carbon sources such as α-naphthol, graphene (Gr) can be generated at relatively low temperatures (600 °C). By optimizing factors such as raw materials, carbon source concentration, growth temperature, and time, the few layers and high-quality Gr on copper (Cu) substrates is achieved, and the properties of Gr are analyzed. Pretreatment of the Cu substrates can enhance the smoothness and flatness of the Cu surface, thereby promoting uniform adsorption of carbon sources and continuous growth of a Gr layer. As the concentration of carbon sources or the growth temperature increases, although the decomposition rate of the carbon source accelerates and ensures adequate carbon supply, the formation of more defects can occur. A deep analysis is provided on the nucleation and growth processes of Gr prepared using the α-naphthol precursor, unveiling the dissociation pathway of α-naphthol and the roles of intermediate active aromatic species with two hexatomic rings in nucleating and assembling the Gr lattice.

摘要

使用诸如α-萘酚等小分子碳源,可以在相对较低的温度(600°C)下生成石墨烯(Gr)。通过优化原料、碳源浓度、生长温度和时间等因素,在铜(Cu)衬底上获得了几层高质量的Gr,并对Gr的性能进行了分析。对Cu衬底进行预处理可以提高Cu表面的光滑度和平整度,从而促进碳源的均匀吸附和Gr层的持续生长。随着碳源浓度或生长温度的增加,尽管碳源的分解速率加快并确保了充足的碳供应,但可能会形成更多缺陷。对使用α-萘酚前驱体制备的Gr的成核和生长过程进行了深入分析,揭示了α-萘酚的解离途径以及具有两个六元环的中间活性芳香族物种在Gr晶格成核和组装中的作用。

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