Herdl Florian, Galfe Natalie, Klenk Sebastian, Dillig Michael, Boche Silke, Bachmann Michael, Schels Andreas, Edler Simon, Dams Florian, Pahlke Andreas, Duesberg Georg S
Institute of Physics & Center for Integrated Sensor Systems (SENS), University of the Bundeswehr Munich, Neubiberg 85579, Germany.
KETEK GmbH, Munich 81737, Germany.
ACS Appl Mater Interfaces. 2025 Jun 11;17(23):34637-34646. doi: 10.1021/acsami.4c19809. Epub 2025 May 30.
Miniaturized integrated hot electron emitters are highly sought after for application in chemical analytics and field-applicable systems. Here, we present the use of ultrathin pyrolyzed polymer films (PPFs) as the gate electrode, enabling the fabrication of highly efficient planar hot electron emitters (PHEEs). The thickness of the PPF was observed to be roughly 1 nm across a full 4" wafer, approaching the monolayer limit. Conductivities of up to 3.5 × 10 S/m at pyrolysis temperatures of only 900 °C were measured, representing a 2-fold increase compared to bulk values. This renders an easily accessible 2D material with high electron transparency. Thus, the PHEE exhibits very high transfer ratios of up to 31% and proves to be stable at high pressures over an extended period of time. Furthermore, the straightforward integration route of the PPF presented here comprises only two steps: photolithography and subsequent pyrolysis. The fabricated devices exhibit high uniformity in performance, with a transfer ratio standard deviation of 2.9% across a single wafer. Ultimately, the devices were fabricated exclusively with silicon dioxide on silicon in combination with carbon, which represents a sustainable fabrication approach with inert materials. It has been demonstrated that the PHEE can also operate in both nitrogen and air, illustrating the utility of these emitters for gas ionization and sensing.
小型化集成热电子发射器在化学分析和现场应用系统中备受青睐。在此,我们展示了使用超薄热解聚合物薄膜(PPF)作为栅电极,从而能够制造高效平面热电子发射器(PHEE)。在整个4英寸晶圆上观察到PPF的厚度约为1纳米,接近单层极限。在仅900℃的热解温度下测量到的电导率高达3.5×10 S/m,与块状材料相比提高了2倍。这使得一种易于获取的具有高电子透明度的二维材料得以实现。因此,PHEE表现出高达31%的非常高的转移率,并被证明在高压下长时间稳定。此外,这里介绍的PPF的直接集成路线仅包括两个步骤:光刻和随后的热解。制造的器件在性能上表现出高度均匀性,在单个晶圆上转移率标准偏差为2.9%。最终,这些器件完全是用硅上的二氧化硅与碳相结合制造的,这代表了一种使用惰性材料的可持续制造方法。已经证明PHEE也可以在氮气和空气中运行,说明了这些发射器在气体电离和传感方面的实用性。