Raihan Md Rakib Hossain, Antala Michal, Stróżecki Marcin, Haque Md Intesaful, Hasanuzzaman Mirza, Juszczak Radosław, Rastogi Anshu
Laboratory of Bioclimatology, Department of Ecology and Environmental Protection, Poznań University of Life Sciences, Poznań 60-649, Poland.
Pioneer Center Land-CRAFT, Department of Agroecology, Aarhus University, Aarhus, Denmark.
Sci Rep. 2025 Jun 2;15(1):19343. doi: 10.1038/s41598-025-04159-1.
This study aimed at investigating the protective role of silicon (Si) in mitigating salt-induced damage in common buckwheat plants (Fagopyrum esculentum cv. Smuga). Twenty one-day-old seedlings were subjected to salt stress by irrigating 50 mM sodium chloride solutions for seven days, with or without Si (two foliar applications with 1 mM sodium metasilicate nonahydrate). Salt stress significantly altered the chlorophyll a fluorescence transient (OJIP) curve, disrupting energy flow and electron transport in photosystem II (PSII), as reflected in the O-J, J-I, and I-P phases, along with the emergence of a positive K-band indicating damage to the oxygen-evolving complex (OEC). Silicon application mitigated these effects, stabilizing the OEC and thylakoid membrane integrity while improving JIP test parameters and reducing excessive energy absorption, dissipation, and unregulated energy loss per reaction center. Silicon-treated plants under salt stress exhibited enhanced photochemical quenching, reduced regulatory energy dissipation, and decreased photosystem I (PSI) over-reduction. A significant increase in open PSI centers was observed, improving the balance and functionality between PSI and photosystem II. The application of Si resulted in significant photosynthetic improvements, which were also paired with enhanced morphological traits, such as increased root length and leaf thickness in saline conditions. Overall, findings indicate that exogenous Si helps to reduce salt-induced stress by enhancing photosynthetic efficiency in plants, positioning it as a promising strategy for improving crop performance in saline environments.
本研究旨在探究硅（Si）在减轻盐胁迫对普通荞麦植株（苦荞麦品种Smuga）造成的损害方面的保护作用。将21日龄的幼苗用50 mM氯化钠溶液灌溉7天以施加盐胁迫，施加或不施加硅（两次叶面喷施1 mM九水偏硅酸钠）。盐胁迫显著改变了叶绿素a荧光瞬变（OJIP）曲线，破坏了光系统II（PSII）中的能量流动和电子传递，这在O-J、J-I和I-P阶段有所体现，同时出现了一个正K带，表明光合放氧复合体（OEC）受到损害。施用硅减轻了这些影响，稳定了OEC和类囊体膜的完整性，同时改善了JIP测试参数，减少了每个反应中心的过量能量吸收、耗散和非调节性能量损失。盐胁迫下经硅处理的植株表现出增强的光化学猝灭、降低的调节性能量耗散以及光系统I（PSI）过度还原的减少。观察到开放的PSI中心显著增加，改善了PSI和光系统II之间的平衡及功能。施用硅导致光合性能显著提高，同时还伴随着形态特征的增强，例如在盐胁迫条件下根长增加和叶片厚度增加。总体而言，研究结果表明，外源硅通过提高植物的光合效率有助于减轻盐胁迫，这使其成为改善盐渍环境中作物性能的一种有前景的策略。
