Yan Sihan, Zhang Jingpeng, Zhang Jia-Han, Wei Songrui, Zhang Shaohui, Li Shan, Tan Chee-Keong, Jiang Mingming, Tang Weihua, Liu Zeng
College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
School of Electronic Information Engineering, Inner Mongolia University, Hohhot 010021, China.
iScience. 2024 Sep 27;27(11):111040. doi: 10.1016/j.isci.2024.111040. eCollection 2024 Nov 15.
The van der Waals thiophosphate GaPS presents additional opportunities for gallium-based semiconductors, but limited research on phonon interactions has hindered optimization on thermal properties. This research undertakes a comprehensive investigation into the anharmonic phonon scattering within GaPS. The findings reveal pronounced anharmonic scattering, with both cubic and quartic phonon scatterings significantly influencing phonon redshift and broadening. Notably, the scattering strength is markedly higher in Raman peaks with higher wavenumbers, where quartic phonon scattering leads to conspicuous nonlinear broadening. Furthermore, a large amount of cubic and quartic scattering events is found to be Umklapp process. Besides, the molecular dynamics calculation quantitatively confirms the extensive redshift and broadening and suggests stronger anharmonic scattering beyond the Brillouin zone center. This research not only elucidates the anharmonic phonon scattering in GaPS4 but also provides theoretical foundation for further application. Concurrently, it enhances the understanding of anharmonic scattering in semiconductors within the condensed matter physics.
范德华硫代磷酸盐GaPS为基于镓的半导体提供了更多机会，但对声子相互作用的研究有限，阻碍了对热性能的优化。本研究对GaPS中的非谐声子散射进行了全面调查。研究结果表明存在明显的非谐散射，三次和四次声子散射对声子红移和展宽都有显著影响。值得注意的是，在波数较高的拉曼峰中，散射强度明显更高，其中四次声子散射导致明显的非线性展宽。此外，发现大量的三次和四次散射事件是倒逆过程。此外，分子动力学计算定量地证实了广泛的红移和展宽，并表明在布里渊区中心之外存在更强的非谐散射。本研究不仅阐明了GaPS4中的非谐声子散射，还为进一步应用提供了理论基础。同时，它增进了对凝聚态物理中半导体非谐散射的理解。
