Joshy Abin, Wang Fei, Younus Sidra, Bai Keyuan, Larionov Konstantin V, Antipina Liubov Yu, Sorokin Pavel B, Ling Yun, Wei Jiang
Physics and Engineering Physics, Tulane University, New Orleans, LA, 70118, USA.
Laboratory of Digital Material Science, National University of Science and Technology MISiS, Moscow, 119049, Russia.
Sci Rep. 2025 Jun 4;15(1):19535. doi: 10.1038/s41598-025-03238-7.
One-dimensional (1D) van der Waals (vdW) nanowires, formed from molecular chains bonded through weak interactions, represent a significant departure from traditional nanowires by offering the potential to miniaturize functional devices to the molecular scale while maintaining crystallinity, a feature attributable to their exfoliable nature and chemically inert surfaces. However, the lack of efficient synthesis methods has hindered the exploration of their intrinsic properties and potential applications. The production of vdW nanowires has predominantly relied on the exfoliation of bulk crystals, leaving their direct synthesis largely unexplored. In this work, we introduce a novel solid-state growth technique that facilitates the high-yield and scalable fabrication of single-crystal TaNiSe (TNS) nanowires, achieving a consistent thickness of 100 nm and lengths extending to several millimeters. We further demonstrate a few centimeter scale alignments of as-grown nanowires and show that these nanowires can be easily dry exfoliated to produce several nanometer-thick, air-stable nanowires. Employing density functional theory, we investigate the bonding characteristics within these nanowires, identifying a highly anisotropic bonding density that significantly contributes to their facile exfoliation. Moreover, the development of Schottky device arrays on individual TNS nanowires and subsequent electrical transport measurements affirm the uniform Schottky contact properties along their entire length, characterized by a barrier height of approximately 0.39 eV. The successful synthesis of structurally and electronically uniform, ultralong TNS nanowires may open a new avenue in developing integrated molecular electronics and sensors using 1D vdW materials.
一维(1D)范德华(vdW)纳米线由通过弱相互作用键合的分子链构成,与传统纳米线有显著不同,它有可能将功能器件小型化至分子尺度,同时保持结晶性,这一特性归因于其可剥离的性质和化学惰性表面。然而,缺乏有效的合成方法阻碍了对其固有特性和潜在应用的探索。vdW纳米线的制备主要依赖于块状晶体的剥离,其直接合成在很大程度上尚未得到探索。在这项工作中,我们引入了一种新颖的固态生长技术,该技术有助于高产率且可扩展地制造单晶TaNiSe(TNS)纳米线,实现了100纳米的一致厚度以及延伸至几毫米的长度。我们进一步展示了生长后的纳米线在几厘米尺度上的排列,并表明这些纳米线可以很容易地进行干法剥离,以制备出几纳米厚、空气稳定的纳米线。利用密度泛函理论,我们研究了这些纳米线内的键合特性,确定了一种高度各向异性的键合密度,这对其易于剥离有显著贡献。此外,在单个TNS纳米线上开发肖特基器件阵列并进行后续的电输运测量,证实了沿其整个长度具有均匀的肖特基接触特性,其势垒高度约为0.39电子伏特。结构和电子性质均一的超长TNS纳米线的成功合成可能为使用1D vdW材料开发集成分子电子学和传感器开辟一条新途径。