Maharana Gouranga, Jayavelu Yuvashree, Kovendhan Manavalan, Joseph D Paul
Department of Physics, National Institute of Technology Warangal Telangana State 506004 India
Department of Physics and Nanotechnology, SRM Institute of Science and Technology Kattankulathur Tamilnadu 603203 India.
Nanoscale Adv. 2025 Jun 3;7(13):4169-4182. doi: 10.1039/d5na00268k. eCollection 2025 Jun 24.
The implications of niobium (Nb) and tungsten (W) co-dopants on the physicochemical characteristics of spray deposited tin oxide (SnO) thin films are investigated in order to evaluate it as an alternative transparent conducting oxide electrode. Co-doping with two cationic elements enables tweaking of the morphological and optoelectronic properties of SnO in thin film form. Spray pyrolysis is utilized for obtaining Nb (1 and 2 wt%) and W (fixed 4 wt%) co-doped SnO thin films on glass substrates. The surface wettability test shows that the cationic co-dopants W and Nb have influenced the SnO thin film by altering the surface features thereby reducing the contact angle value. The transmittance spectra indicate that pure SnO has a higher transmittance value of 83%, which diminishes upon addition of the W dopant and increases after Nb is introduced as a co-dopant. The linear four-probe measurement revealed that the films have a uniform sheet resistance around the centre with a low sheet resistance of ∼62 Ω □. The stabilized transparent conducting electrode's figures of merit of the deposited W and Nb co-doped SnO thin films are calculated and the promising results of photocatalytic tests for mixed dyes are discussed in correlation with the physicochemical and optoelectronic properties.
研究了铌(Nb)和钨(W)共掺杂对喷雾沉积氧化锡(SnO)薄膜物理化学特性的影响,以评估其作为替代透明导电氧化物电极的可能性。两种阳离子元素的共掺杂能够调整薄膜形式的SnO的形态和光电性能。采用喷雾热解法在玻璃基板上制备了铌(1 wt%和2 wt%)和钨(固定为4 wt%)共掺杂的SnO薄膜。表面润湿性测试表明,阳离子共掺杂剂钨和铌通过改变表面特征影响了SnO薄膜,从而降低了接触角值。透过光谱表明,纯SnO的透过率较高,为83%,添加钨掺杂剂后透过率降低,引入铌作为共掺杂剂后透过率增加。线性四探针测量表明,薄膜在中心周围具有均匀的薄层电阻,薄层电阻约为62 Ω/sq。计算了沉积的钨和铌共掺杂SnO薄膜稳定透明导电电极的品质因数,并结合物理化学和光电性能讨论了混合染料光催化测试的 promising 结果。