Hou Xiaohu, Li Chen, Chen Chen, Bai Shiyu, Liu Yan, Peng Zhixin, Zhao Xiaolong, Zhou Xuanze, Xu Guangwei, Gao Nan, Long Shibing
School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China.
Anhui Province Key Laboratory of Integrated Circuit Science and Technology, University of Science and Technology of China, Hefei, 230026, China.
Adv Mater. 2025 Aug;37(33):e2506179. doi: 10.1002/adma.202506179. Epub 2025 Jun 5.
The development of high-performance detectors has played a key role in the innovation of modern optoelectronics. However, the implementation of high-performance detectors has been a huge challenge, especially the present detectors with only optoelectronic conversion functions cannot satisfy the growing demands of the multifunction required in single devices. Here, it is demonstrated a novel in-memory photodetector based on wide bandgap semiconductor GaO by integrating memory characteristics into the detector. Originating from the dynamic control of the channel carriers by the interface charge reservoir under illumination and electrical, the device exhibits extraordinary memory characteristics and photodetection performance. The ultrahigh-speed programming/erasing operations in the range of nanoseconds with an extinction ratio up to 10 is achieved. Moreover, the in-memory photodetectors achieve near-zero dark current, record high responsivity (6.7 × 10 A W), and sensitivity for UV light, making them the most sensitive UV photodetectors. Further, the potential of the device in weak-light imaging enhancement, light information storage, and light moving path recording in the passive mode is excavated for the first time. This work enables new device capabilities and opens new opportunities for the development of high-performance in-memory detectors.
高性能探测器的发展在现代光电子学创新中发挥了关键作用。然而，高性能探测器的实现一直是一项巨大挑战，尤其是目前仅具有光电转换功能的探测器无法满足单器件中对多功能日益增长的需求。在此，通过将存储特性集成到探测器中，展示了一种基于宽带隙半导体GaO的新型内存光探测器。由于在光照和电作用下界面电荷库对沟道载流子的动态控制，该器件展现出非凡的存储特性和光电探测性能。实现了在纳秒范围内高达10的消光比的超高速编程/擦除操作。此外，内存光探测器实现了近零暗电流、创纪录的高响应度（6.7×10 A W）以及对紫外光的灵敏度，使其成为最灵敏的紫外光探测器。此外，首次挖掘了该器件在弱光成像增强、光信息存储以及被动模式下光移动路径记录方面的潜力。这项工作实现了新的器件功能，并为高性能内存探测器的发展开辟了新机遇。
