Jiang Zheng, Yang Jie, Wang Wenbin, Liu Yangyu, Zhou Yuhan, Xu Jing, Wang Wang, Ding Hongyao, Zhong Ya, Zhao Haifeng, Bai Sai, Xu Weidong, Tsoi Wing Chung, Yu Tao, Bao Chunxiong, Shen Xiaodong, Teng Pengpeng
Jiangsu Collaborative Innovation Center for Advanced Inorganic Functional Composites, College of Materials Science and Engineering, Nanjing Tech University, Nanjing, 211816, China.
Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China.
Angew Chem Int Ed Engl. 2025 Aug 11;64(33):e202507914. doi: 10.1002/anie.202507914. Epub 2025 Jun 18.
Tin (Sn)-based perovskites show great potential for environmentally friendly and high-performance light-emitting diodes (LEDs). However, the development of Sn-based perovskite LEDs (PeLEDs) lags significantly behind that of lead-based perovskites. This is mainly due to the faster crystallization rate of Sn-based perovskites that leads to a higher defect density in Sn-based perovskite films, thereby serious nonradiative recombination. Here, we demonstrated a buried interface modification (BIM) strategy to regulate the crystallization kinetics of Sn-based perovskite films by using carboxylate as multifunctional surface modifiers. We reveal that the buried interface is critical to improve the nucleation and crystallization of Sn-based perovskite films. As a result, efficient near-infrared Sn-based PeLEDs were achieved with an external quantum efficiency (EQE) of 11.9%. This work suggests an efficient and elegant route to obtain high-performance Sn-based perovskite films and devices.
锡（Sn）基钙钛矿在环保型高性能发光二极管（LED）方面展现出巨大潜力。然而，锡基钙钛矿发光二极管（PeLED）的发展明显落后于铅基钙钛矿。这主要是由于锡基钙钛矿的结晶速率更快，导致锡基钙钛矿薄膜中的缺陷密度更高，从而产生严重的非辐射复合。在此，我们展示了一种埋入界面修饰（BIM）策略，通过使用羧酸盐作为多功能表面修饰剂来调控锡基钙钛矿薄膜的结晶动力学。我们发现埋入界面对于改善锡基钙钛矿薄膜的成核和结晶至关重要。结果，实现了高效的近红外锡基PeLED，其外量子效率（EQE）为11.9%。这项工作为获得高性能锡基钙钛矿薄膜和器件提供了一条高效且巧妙的途径。
