Anisotropic Photoelectric Properties of Aligned P3HT Nanowire Arrays Fabricated via Solution Blade Coating and UV-Induced Molecular Ordering.

This paper reports on the anisotropic optoelectronic properties of aligned poly(3-hexylthiophene) (P3HT) nanowire (NW) arrays fabricated via blade coating and UV irradiation, exhibiting a remarkably high electrical resistance anisotropy ratio of up to 8.05 between the parallel (0°) and perpendicular (90°) directions. This resistance anisotropy originates from the advantage of directional charge transport. Optimized 5 mg/mL P3HT solutions under 32 min UV irradiation yielded unidirectional π-π*-stacked NWs with enhanced crystallinity. Polarized microscopy and atomic force microscopy confirmed high alignment and dense NW networks. The angular dependence of polarization exhibits a cosine-modulated response, while the angular anisotropy of the measured photocurrent points to structural alignment rather than trap-state control. The scalable fabrication and tunable anisotropy demonstrate potential for polarization-sensitive organic electronics and anisotropic logic devices.