Nguyen Chuong V, Truong Pham Thiet, Phuc Huynh V, Nguyen Cuong Q, Hiep Nguyen T, Hieu Nguyen N
Department of Materials Science and Engineering, Le Quy Don Technical University, Hanoi 100000, Vietnam.
Faculty of Physics, Hue University of Education, Hue University, Hue 530000, Vietnam.
Nano Lett. 2025 Jul 2;25(26):10673-10679. doi: 10.1021/acs.nanolett.5c02560. Epub 2025 Jun 18.
The rational design of two-dimensional (2D) metal-semiconductor (M-S) heterostructures through contact engineering is crucial for the development of next-generation nanoelectronic devices. In this Letter, van der Waals design strategies were employed to explore the contact characteristics between goldene and MXene ScCF. Our findings reveal that n-type Schottky contacts are formed across all goldene/ScCF heterostructures. Notably, this heterostructure exhibits reversible switching between n- and p-type Schottky contacts and can be tuned from Schottky to ohmic contacts via electric gating and vertical strain. Furthermore, goldene/ScCF exhibits a low tunneling specific resistivity of 2.80 × 10 Ω cm, indicating its excellent charge injection efficiency. These findings offer valuable theoretical guidance for the design and optimization of goldene-based devices, such as field-effect transistors (FETs) and photodetectors.
通过接触工程对二维（2D）金属 - 半导体（M - S）异质结构进行合理设计对于下一代纳米电子器件的发展至关重要。在本信函中，采用范德华设计策略来探究金烯与MXene ScCF之间的接触特性。我们的研究结果表明，在所有金烯/ScCF异质结构中均形成了n型肖特基接触。值得注意的是，这种异质结构在n型和p型肖特基接触之间表现出可逆切换，并且可以通过电门控和垂直应变从肖特基接触调谐为欧姆接触。此外，金烯/ScCF表现出2.80×10Ω·cm的低隧穿比电阻率，表明其具有优异的电荷注入效率。这些发现为基于金烯的器件（如场效应晶体管（FET）和光电探测器）的设计和优化提供了有价值的理论指导。
