用于倒置钙钛矿太阳能电池的富硫空穴传输材料。
Sulfur-Rich Hole-Transporting Materials for Inverted Perovskite Solar Cells.
作者信息
Tingare Yogesh S, Liu Lin-Yi, Su Chaochin, Lin Wen-Zheng, Yen Chen-Yi, Chen Wei-Hong, Teng Sheng-Hung, Chen Mei-Jie, Chu Chen-Wei, Li Wen-Ren
机构信息
Institute of Organic and Polymeric Materials/Research and Development Center for Smart Textile Technology, National Taipei University of Technology, Taipei 106344, Taiwan.
Department of Chemistry, National Central University, Zhongli 32001, Taiwan.
出版信息
Org Lett. 2025 Jul 4;27(26):6983-6988. doi: 10.1021/acs.orglett.5c01859. Epub 2025 Jun 19.
We introduce an electron-rich hole-transporting material (HTM), , based on a sulfur-rich terthiophene core. This HTM features two triphenylamine donor groups at the 4,4″ positions and four additional triphenylamine groups at the 5,5″ positions connected by vinylene linkages. Its good hole-transporting properties, reduced series resistance, and effective defect passivation contribute to the improved performance. With a remarkable power conversion efficiency of 19.48%, this HTM ranks among the top nonfused terthiophene-based, dopant-free HTMs.
我们介绍了一种基于富硫三联噻吩核的富电子空穴传输材料（HTM）。这种HTM在4,4″位具有两个三苯胺供体基团，在5,5″位通过亚乙烯基连接有另外四个三苯胺基团。其良好的空穴传输性能、降低的串联电阻和有效的缺陷钝化有助于提高性能。这种HTM具有19.48%的显著功率转换效率，跻身于顶级的非稠合三联噻吩基无掺杂HTM之列。
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