Polarization-controlled switching of magnetic anisotropy in CrSe/ScCOmultiferroic heterostructures.

Recent breakthroughs in two-dimensional (2D) magnetic materials have unveiled intriguing phenomena in low-dimensional ferromagnetic (FM) systems. However, their integration into spintronic devices faces challenges due to the predominant in-plane (IP) orientation of the easy magnetization axis. Achieving nonvolatile electrical control over magnetic anisotropy in such systems is essential for advancing next-generation spintronic technologies. In this work, we introduce a multiferroic van der Waals (vdW) heterostructure design that enables dynamic manipulation of magnetoelectric coupling in 2D ferromagnets. By investigating the CrSe/ScCOheterostructure-comprising a FM CrSemonolayer coupled with a ferroelectric ScCOlayer-we demonstrate reversible switching of magnetic anisotropy via polarization engineering. Crucially, the system exhibits a controllable transition of the easy magnetization axis between IP and out-of-plane configurations, driven by ferroelectric polarization reversal. This magnetoelectric coupling mechanism unlocks novel functionalities for nonvolatile memory devices and adaptive logic components. Our findings provide a foundational strategy for voltage-free magnetic anisotropy tuning in vdWs heterostructures while elucidating interfacial magnetoelectric effects in low-dimensional systems.