He Zhijian, Zou Daifeng
School of Physics and Electronic Science, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China.
Hunan Provincial Key Laboratory of Intelligent Sensors and Advanced Sensor Materials, Xiangtan 411201 Hunan, People's Republic of China.
J Phys Condens Matter. 2025 Jun 20;37(26). doi: 10.1088/1361-648X/ade48a.
Recent breakthroughs in two-dimensional (2D) magnetic materials have unveiled intriguing phenomena in low-dimensional ferromagnetic (FM) systems. However, their integration into spintronic devices faces challenges due to the predominant in-plane (IP) orientation of the easy magnetization axis. Achieving nonvolatile electrical control over magnetic anisotropy in such systems is essential for advancing next-generation spintronic technologies. In this work, we introduce a multiferroic van der Waals (vdW) heterostructure design that enables dynamic manipulation of magnetoelectric coupling in 2D ferromagnets. By investigating the CrSe/ScCOheterostructure-comprising a FM CrSemonolayer coupled with a ferroelectric ScCOlayer-we demonstrate reversible switching of magnetic anisotropy via polarization engineering. Crucially, the system exhibits a controllable transition of the easy magnetization axis between IP and out-of-plane configurations, driven by ferroelectric polarization reversal. This magnetoelectric coupling mechanism unlocks novel functionalities for nonvolatile memory devices and adaptive logic components. Our findings provide a foundational strategy for voltage-free magnetic anisotropy tuning in vdWs heterostructures while elucidating interfacial magnetoelectric effects in low-dimensional systems.
二维（2D）磁性材料的最新突破揭示了低维铁磁（FM）系统中有趣的现象。然而，由于易磁化轴主要为面内（IP）取向，将它们集成到自旋电子器件中面临挑战。在这类系统中实现对磁各向异性的非易失性电控制对于推进下一代自旋电子技术至关重要。在这项工作中，我们引入了一种多铁性范德华（vdW）异质结构设计，该设计能够动态操纵二维铁磁体中的磁电耦合。通过研究由FM CrSe单层与铁电ScCO层耦合而成的CrSe/ScCO异质结构，我们展示了通过极化工程实现磁各向异性的可逆切换。至关重要的是，该系统在铁电极化反转的驱动下，展现出易磁化轴在面内和面外配置之间的可控转变。这种磁电耦合机制为非易失性存储器件和自适应逻辑组件解锁了新功能。我们的研究结果为在vdW异质结构中进行无电压磁各向异性调谐提供了一种基础策略，同时阐明了低维系统中的界面磁电效应。
