Wang Xiaonan, Tian Yuan, Yao Libing, Zhang Shaochen, Liu Qingqing, Zhao Ke, Xu Jiazhe, Zhou Jingjing, Deger Caner, Yavuz Ilhan, Xue Jingjing, Wang Rui
State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
Department of Materials Science and Engineering, School of Engineering, Westlake University, Hangzhou, 310024, China.
Adv Sci (Weinh). 2025 Jun 25:e05288. doi: 10.1002/advs.202505288.
To effectively minimize reflection losses and achieve compatibility with industrial-scale silicon production lines, textured silicon/perovskite tandem solar cells have garnered significant attention in recent research. However, achieving uniform and stable coverage of the textured silicon substrate with hole-selective layer (HSL) remains a significant challenge. Herein, a HSL material, DPAICz ((indolo[2,3-a]carbazole-11,12-diylbis(ethane-2,1-diyl))bis(phosphonic acid)), is reported specifically designed for textured silicon substrate. Compared to the typical HSL material 2PACz, DPAICz features a π-expanded conjugated core and multiple anchoring groups, forming a split-standing configuration with anchoring groups positioned on opposite sides, resulting in superior anchoring stability on textured substrate under external stimuli. Moreover, DPAICz exhibited a larger molecular dipole moment and a more pronounced p-type characteristic, enhancing the interfacial hole extraction efficiency. Consequently, wide-bandgap (1.68 eV) perovskite solar cells employing DPAICz as the HSL achieved a champion power conversion efficiency (PCE) of 23.42%. Introducing the DPAICz into monolithic silicon/perovskite tandem solar cells greatly improved their performance, achieving a remarkable PCE of 32.55% in 1 cm area. Importantly, the unencapsulated tandems based on DPAICz exhibited significantly enhanced long-term operational stability, retaining 96% of its initial PCE after 880 h of continuous 1-sun light soaking at 45 °C under open-circuit condition.
为了有效减少反射损失并实现与工业规模硅生产线的兼容性，纹理化硅/钙钛矿串联太阳能电池在最近的研究中受到了广泛关注。然而，用空穴选择性层（HSL）实现纹理化硅衬底的均匀稳定覆盖仍然是一个重大挑战。在此，报道了一种专门为纹理化硅衬底设计的HSL材料，即DPAICz（(吲哚并[2,3-a]咔唑-11,12-二亚基双(乙烷-2,1-二亚基))双(膦酸)）。与典型的HSL材料2PACz相比，DPAICz具有π扩展共轭核和多个锚定基团，形成了一种分裂式站立构型，锚定基团位于相对两侧，从而在外部刺激下在纹理化衬底上具有优异的锚定稳定性。此外，DPAICz表现出更大的分子偶极矩和更明显的p型特性，提高了界面空穴提取效率。因此，采用DPAICz作为HSL的宽带隙（1.68 eV）钙钛矿太阳能电池实现了23.42%的最佳功率转换效率（PCE）。将DPAICz引入单片硅/钙钛矿串联太阳能电池中极大地提高了它们的性能，在1平方厘米面积内实现了32.55%的显著PCE。重要的是，基于DPAICz的未封装串联电池表现出显著增强的长期运行稳定性，在45℃开路条件下连续1太阳光照浸泡880小时后仍保留其初始PCE的96%。
