Xu Ziqiang, Shao Yan, Huang Chun, Zhu Chao, Hu Genyu, Hu Shihao, Li Zhi-Lin, Hao Xiaoyu, Hou Yanhui, Zhang Teng, Liu Liwei, Shi Jin-An, Liu Chen, Wang Jia-Ou, Zhou Wu, Zhou Jiadong, Ji Wei, Wang Yeliang, Zhang Chendong, Qiao Jingsi, Gao Hong-Jun, Wu Xu
State Key Laboratory of Chips and Systems for Advanced Light Field Display, Center for Interdisciplinary Science of Optical Quantum and NEMS Integration, School of Physics, School of Interdisciplinary Science, and School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
School of Physics and Technology, Wuhan University, Wuhan 430072, China.
Sci Adv. 2025 Jun 27;11(26):eadq4406. doi: 10.1126/sciadv.adq4406.
As a fundamental structural feature, the symmetry of materials determines the exotic quantum properties in transition metal dichalcogenides (TMDs) with charge density waves (CDWs). The Janus structure, an artificially constructed lattice, provides an opportunity to tune the electronic structures and their associated behavior, such as CDW states. However, limited by the difficulties in atomic-level fabrication and material stability, the experimental visualization of the CDW states in two-dimensional (2D) TMDs with Janus structure is still rare. Here, using surface selenization of VTe, we fabricated monolayer Janus VTeSe. With scanning tunneling microscopy, we observed and characterized an unusual [Formula: see text] CDW state with threefold rotational symmetry breaking. Combined with theoretical calculations, we find that this CDW state can be attributed to the magnetic-involved charge modulation in the Janus VTeSe, rather than the conventional electron-phonon coupling. Our findings provide a promising platform for studying the CDW states and artificially tuning the electronic properties of the 2D TMDs toward the related fundamental and applied studies.
作为一种基本的结构特征,材料的对称性决定了具有电荷密度波(CDW)的过渡金属二硫属化物(TMD)中的奇异量子特性。人工构建的晶格——雅努斯结构,为调节电子结构及其相关行为(如CDW态)提供了契机。然而,受限于原子级制造的困难和材料稳定性,具有雅努斯结构的二维(2D)TMD中CDW态的实验可视化仍然很少见。在此,我们通过VTe的表面硒化,制备了单层雅努斯VTeSe。利用扫描隧道显微镜,我们观察并表征了一种具有三重旋转对称性破缺的异常[公式:见正文]CDW态。结合理论计算,我们发现这种CDW态可归因于雅努斯VTeSe中涉及磁性的电荷调制,而非传统的电子 - 声子耦合。我们的研究结果为研究CDW态以及朝着相关基础和应用研究人工调节二维TMD的电子特性提供了一个有前景的平台。