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范德华铁磁体中室温下应变诱导的稳健斯格明子晶格

Strain-Induced Robust Skyrmion Lattice at Room Temperature in van der Waals Ferromagnet.

作者信息

Zhou Xinyi, Malik Iftikhar Ahmed, Duan Ruihuan, Shi Hanqing, Liu Chen, Luo Yan, Sun Yue, Chen Ruixi, Liu Yilin, Xia Shian, Zhang Vanessa Li, Liu Sheng, Zhu Chao, Zhang Xixiang, Du Yi, Liu Zheng, Yu Ting

机构信息

School of Physics and Technology, Wuhan University, Wuchang District, Hubei, 430072, China.

School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.

出版信息

Adv Mater. 2025 Sep;37(37):e2505977. doi: 10.1002/adma.202505977. Epub 2025 Jul 1.

DOI:10.1002/adma.202505977
PMID:40589237
Abstract

Manipulating topological magnetic orders of 2D magnets by strain, once achieved, offers enormous potential for future low-power flexible spintronic applications. In this work, by placing FeGaTe (FGaT), a room-temperature 2D ferromagnet, on flexible substrate, a field-free and robust formation of skyrmion lattice induced by strain is demonstrated. By applying a minimal strain of ≈0.80% to pre-annealed FGaT flakes, the Magnetic Force Microscopy (MFM) tip directly triggers the transition from maze-like domains to an ordered skyrmion lattice while scanning the sample surface. The skyrmion lattice is rather stable against extensive cyclic mechanical testing (stretching, bending, and twisting over 2000 cycles each). It also exhibits stability across a wide range of magnetic fields (≈2.9 kOe) and temperatures (≈323 K), as well as long-term retention stability, highlighting its robustness and field-free stabilization. The strain effect reduces the lattice symmetry and enhances the Dzyaloshinskii-Moriya interaction (DMI) of FGaT, thus stabilizing the skyrmion lattice. The findings highlight the potential of FGaT for integrating magnetic skyrmions into future low-power-consumption flexible spintronics devices.

摘要

通过应变操纵二维磁体的拓扑磁序一旦实现,将为未来的低功耗柔性自旋电子学应用提供巨大潜力。在这项工作中,通过将室温二维铁磁体FeGaTe(FGaT)放置在柔性衬底上,证明了由应变诱导的无场且稳健的斯格明子晶格的形成。通过对预退火的FGaT薄片施加约0.80%的最小应变,磁力显微镜(MFM)尖端在扫描样品表面时直接触发从迷宫状畴到有序斯格明子晶格的转变。斯格明子晶格在广泛的循环机械测试(拉伸、弯曲和扭转各超过2000次循环)中相当稳定。它在很宽的磁场范围(约2.9 kOe)和温度范围(约323 K)内也表现出稳定性,以及长期保留稳定性,突出了其稳健性和无场稳定性。应变效应降低了FGaT的晶格对称性并增强了其Dzyaloshinskii-Moriya相互作用(DMI),从而稳定了斯格明子晶格。这些发现突出了FGaT在将磁性斯格明子集成到未来低功耗柔性自旋电子器件中的潜力。

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